ATF-26836-STR HP [Agilent(Hewlett-Packard)], ATF-26836-STR Datasheet - Page 2

• Manufacturer Part Number: ATF-26836-STR
• Description: 2-16 GHz General Purpose Gallium Arsenide FET
• Manufacturer: HP [Agilent(Hewlett-Packard)]

Part Number Ordering Information
ATF-26836 Absolute Maximum Ratings
ATF-26836 Typical Performance, T
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
Symbol
Thermal Resistance:
Liquid Crystal Measurement:
25
20
15
10
DS
5
0
ATF-26836-TR1
ATF-26836-STR
T
2.0
V
V
V
T
Part Number
I
P
= 5 V, I
STG
DS
GD
CH
DS
GS
T
|S
21
DS
FREQUENCY (GHz)
|
2
4.0
= 30 mA.
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature
6.0 8.0 10.0 12.0 16.0
MSG
Parameter
Devices Per Reel
[2,3]
1000
10
[4]
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
1
DS
25
20
15
10
jc
5
0
2.0
= 350 C/W; T
= 3 V, I
m Spot Size
Units
A
mW
mA
= 25 C
V
V
V
C
C
DS
FREQUENCY (GHz)
4.0
MSG
= 10 mA.
5-68
Reel Size
[5]
|S
Maximum
CH
-65 to +175
21
6.0 8.0 10.0 12.0 16.0
strip
Absolute
|
7"
2
= 150 C
I
275
175
+ 7
DSS
-4
-8
MAG
[1]
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 2.9 mW/ C for
4. Storage above +150 C may tarnish
5. The small spot size of this tech-
any of these limits are exceeded.
T
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175 C.
nique results in a higher, though
more accurate determination of
than do alternate methods. See
MEASUREMENTS section for
more information.
CASE
CASE
= 25 C.
>79 C.
jc