ATF55143 HP [Agilent(Hewlett-Packard)], ATF55143 Datasheet - Page 3

• Manufacturer Part Number: ATF55143
• Description: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: HP [Agilent(Hewlett-Packard)]

ATF-55143 Electrical Specifications
T
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Ga
OIP3
P1dB
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 6 wafers.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit
represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses
have been de-embedded from actual measurements.
Input
A
= 25 C, RF parameters measured in a test circuit for a typical device
Line Including
Transmission
(0.3 dB loss)
Gate Bias T
50 Ohm
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Associated Gai n
Output 3
Intercept Point
1dB Compressed
Output Power
rd
Order
[1]
[1]
[1]
[1]
Matching Circuit
(0.3 dB loss)
_mag = 0.4
_ang = 83
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
Input
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 2 mA
Vds = 2.7V, Vgs = 0V
Vds = 2.7V, gm = Idss/ Vgs;
Vgd = Vgs = -2.7V
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vgs = 0.75 – 0.7 = 0.05V
DUT
3
Matching Circuit
(1.2 dB loss)
_ang = -26
_mag = 0.5
Output
Units
V
V
mmho
dB
dB
dB
dB
dBm
dBm
dBm
dBm
A
A
Min.
0.3
0.18
—
110
—
—
—
15.5
—
22.0
—
—
—
Line Including
Transmission
Drain Bias T
(0.3 dB loss)
50 Ohm
Typ.
0.47
0.37
0.1
220
—
0.6
0.3
17.7
21.6
24.2
22.3
14.4
14.2
[2]
Output
Max.
0.65
0.53
3
285
95
0.9
—
18.5
—
—
—
—
—