RU4H10P RUICHIPS [Ruichips Semiconductor Co., Ltd], RU4H10P Datasheet - Page 2

• Manufacturer Part Number: RU4H10P
• Description: N-Channel Advanced Power MOSFET
• Manufacturer: RUICHIPS [Ruichips Semiconductor Co., Ltd]

Electrical Characteristics
Copyright
Rev. A – FEB., 2012
Static Characteristics
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Notes:
R
Symbol
BV
V
DS(ON)
V
t
t
d(OFF)
C
I
I
C
C
d(ON)
Q
Q
GS(th)
R
Q
DSS
GSS
SD
Q
t
t
t
oss
rss
rr
iss
DSS
gd
r
f
gs
G
rr
g
③
③
②Limited by T
③Pulse test ; Pulse width 300 s, duty cycle 2%.
④Guaranteed by design, not subject to production testing.
①Current limited by maximum junction temperature.
Ruichips Semiconductor Co., Ltd
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance V
Jmax
Parameter
, I
④
AS
=14A, V
④
DD
= 100V, R
(T
C
I
I
V
V
V
Frequency=1.0MHz
V
I
R
V
I
V
V
V
V
=25°C Unless Otherwise Noted)
SD
SD
DS
DS
G
GS
GS
DS
DD
DS
G
GS
DS
DS
GS
GS
= 50Ω , Starting T
=10A, V
=10A, dl
=10A, V
=25
=10A
= 200V,
=200V, R
=320V, V
=0V,V
=0V,
= 400V, V
=V
=0V, I
=±30V, V
=10V, I
2
Test Condition
GS
, I
DS
DS
DS
GS
GEN
SD
DS
=0V,F=1MHz
=250 A
=250 A
=0V
GS
/dt=100A/ s
L
=5A
DS
GS
=20 ,
= 10V,
= 10V,
=0V
=0V
T
J
J
= 25°C.
=85°C
Min.
400
2
RU4H10P
1060
Typ.
250
175
0.45
3.5
2.3
23
10
23
15
22
55
22
9
www.ruichips.com
3
RU4H10P
Max.
±100
0.55
1.2
30
4
1
Unit
nC
nA
pF
ns
ns
V
V
V
C
A