SST39VF320-90-4I-EK Silicon Storage Technology, Inc, SST39VF320-90-4I-EK Datasheet

SST39VF320-90-4I-EK

Manufacturer Part Number

SST39VF320-90-4I-EK

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheets

1.SST39VF320.pdf (24 pages)

2.SST39VF320-90-4C-EK.pdf (24 pages)

3.SST39VF320-90-4I-EK.pdf (24 pages)

Specifications of SST39VF320-90-4I-EK

Case

TSOP48

Date_code

2006+

Current page: 1 of 24
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FEATURES:

• Organized as 2M x16

• Single 2.7-3.6V Read and Write Operations

• Superior Reliability

• Low Power Consumption (typical values at 5 MHz)

• Sector-Erase Capability

• Block-Erase Capability

• Fast Read Access Time

• Latched Address and Data

PRODUCT DESCRIPTION

The SST39VF320 devices are 2M x16 CMOS Multi-Pur-

pose Flash (MPF) manufactured with SST's proprietary,

high performance CMOS SuperFlash technology. The

split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39VF320 write (Program or

Erase) with a 2.7-3.6V power supply.

Featuring

SST39VF320 devices provide a typical Word-Program

time of 7 µsec. The devices use Toggle Bit or Data# Polling

to indicate the completion of Program operation. To protect

against inadvertent write, these devices have on-chip hard-

ware and software data protection schemes. Designed,

manufactured, and tested for a wide spectrum of applica-

tions, the SST39VF320 are offered with a guaranteed typi-

cal endurance of 100,000 cycles. Data retention is rated at

greater than 100 years.

The SST39VF320 devices are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

the SST39VF320 significantly improve performance and

reliability, while lowering power consumption. The

SST39VF320 inherently use less energy during Erase and

Program than alternative flash technologies. The total

energy consumed is a function of the applied voltage, cur-

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to pro-

S71143-02-000

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

– Uniform 2 KWord sectors

– Uniform 32 KWord blocks

– 70 ns

– 90 ns

high

performance

32 Mbit (x16) Multi-Purpose Flash

11/03

SST39VF3202.7V 32Mb (x16) MPF memory

Word-Program,

SST39VF320

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Word-Program

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

gram and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less than

alternative flash technologies. The devices also improve

flexibility while lowering the cost for program, data, and con-

figuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39VF320 is offered in 48-lead TSOP and 48-ball

TFBGA packages. See Figures 1 and 2 for pinouts.

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

15 seconds (typical)

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Preliminary Specifications

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