SST39VF1682-70-4I-EK Silicon Storage Technology, Inc, SST39VF1682-70-4I-EK Datasheet

SST39VF1682-70-4I-EK

Manufacturer Part Number

SST39VF1682-70-4I-EK

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheets

1.SST39VF1681.pdf (29 pages)

2.SST39VF1682-70-4C-EKE.pdf (29 pages)

3.SST39VF1682-70-4I-EK.pdf (29 pages)

Specifications of SST39VF1682-70-4I-EK

Case

TSOP48

Date_code

2006+

Current page: 1 of 29
Download datasheet (475Kb)

FEATURES:

• Organized as 2M x8

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption (typical values at 5 MHz)

• Hardware Block-Protection/WP# Input Pin

• Sector-Erase Capability

• Block-Erase Capability

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

PRODUCT DESCRIPTION

The SST39VF168x devices are 2M x8 CMOS Multi-Pur-

pose Flash Plus (MPF+) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injec-

tor attain better reliability and manufacturability compared

with alternate approaches. The SST39VF168x write (Pro-

gram or Erase) with a 2.7-3.6V power supply. These

devices conform to JEDEC standard pinouts for x8 mem-

ories.

Featuring

SST39VF168x devices provide a typical Byte-Program

time of 7 µsec. These devices use Toggle Bit or Data# Poll-

ing to indicate the completion of Program operation. To pro-

tect against inadvertent write, they have on-chip hardware

and Software Data Protection schemes. Designed, manu-

factured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical endur-

ance of 100,000 cycles. Data retention is rated at greater

than 100 years.

The SST39VF168x devices are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

S71243-03-000

– 2.7-3.6V

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

– Top Block-Protection (top 64 KByte)

– Bottom Block-Protection (bottom 64 KByte)

– Uniform 4 KByte sectors

– Uniform 64 KByte blocks

for SST39VF1682

for SST39VF1681

high

16 Mbit (x8) Multi-Purpose Flash Plus

performance

11/03

SST39VF1681 / 16822.7V 16Mb (x8) MPF+ memories

SST39VF1681 / SST39VF1682

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Security-ID Feature

• Fast Read Access Time:

• Latched Address and Data

• Fast Erase and Byte-Program:

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

they significantly improve performance and reliability, while

lowering power consumption. They inherently use less

energy during Erase and Program than alternative flash

technologies. The total energy consumed is a function of

the applied voltage, current, and time of application. Since

for any given voltage range, the SuperFlash technology

uses less current to program and has a shorter erase time,

the total energy consumed during any Erase or Program

operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high density, surface mount requirements, the

SST39VF168x are offered in both 48-ball TFBGA and

48-lead TSOP packages. See Figures 1 and 2 for pin

assignments.

– SST: 128 bits; User: 128 bits

– 70 ns

– 90 ns

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Byte-Program Time: 7 µs (typical)

– Internal V

– Toggle Bits

– Data# Polling

– Flash EEPROM Pinouts and Command sets

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Preliminary Specifications

Related parts for SST39VF1682-70-4I-EK

Related keywords

SST39VF1682-70-4I-EK datasheet
SST39VF1682-70-4I-EK data sheet
SST39VF1682-70-4I-EK pdf datasheet
SST39VF1682-70-4I-EK component
SST39VF1682-70-4I-EK part
SST39VF1682-70-4I-EK distributor
SST39VF1682-70-4I-EK RoHS
SST39VF1682-70-4I-EK datasheet download