SST39VF1602-70-4C-EK Silicon Storage Technology, Inc, SST39VF1602-70-4C-EK Datasheet

SST39VF1602-70-4C-EK

Manufacturer Part Number

SST39VF1602-70-4C-EK

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheets

1.SST39VF6402-70-4I-EK.pdf (32 pages)

2.SST39VF1602-70-4C-EK.pdf (32 pages)

3.SST39VF1602-70-4C-EK.pdf (32 pages)

Specifications of SST39VF1602-70-4C-EK

Case

TSOP48

Date_code

2006+

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FEATURES:

• Organized as 1M x16: SST39VF1601/1602

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption (typical values at 5 MHz)

• Hardware Block-Protection/WP# Input Pin

• Sector-Erase Capability

• Block-Erase Capability

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

PRODUCT DESCRIPTION

The SST39VF160x/320x/640x devices are 1M x16, 2M

x16, and 4M x16 respectively, CMOS Multi-Purpose

Flash Plus (MPF+) manufactured with SST’s proprietary,

high performance CMOS SuperFlash technology. The

split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared

with alternate approaches. The SST39VF160x/320x/640x

write (Program or Erase) with a 2.7-3.6V power supply.

These devices conform to JEDEC standard pinouts for

x16 memories.

Featuring

SST39VF160x/320x/640x devices provide a typical Word-

Program time of 7 µsec. These devices use Toggle Bit or

Data# Polling to indicate the completion of Program opera-

tion. To protect against inadvertent write, they have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

typical endurance of 100,000 cycles. Data retention is rated

at greater than 100 years.

S71223-03-000

16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus

– 2.7-3.6V

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

– Top Block-Protection (top 32 KWord)

– Bottom Block-Protection (bottom 32 KWord)

– Uniform 2 KWord sectors

– Uniform 32 KWord blocks

for SST39VF1602/3202/6402

for SST39VF1601/3201/6401

high

SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories

2M x16: SST39VF3201/3202

4M x16: SST39VF6401/6402

performance

SST39VF1601 / SST39VF3201 / SST39VF6401

SST39VF1602 / SST39VF3202 / SST39VF6402

11/03

Word-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Security-ID Feature

• Fast Read Access Time:

• Latched Address and Data

• Fast Erase and Word-Program:

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

The SST39VF160x/320x/640x devices are suited for appli-

cations that require convenient and economical updating of

program, configuration, or data memory. For all system

applications, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during Erase and Program than alter-

native flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

– SST: 128 bits; User: 128 bits

– 70 ns

– 90 ns

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

– Internal V

– Toggle Bits

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm) for 16M and 32M

– 48-ball TFBGA (8mm x 10mm) for 64M

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Preliminary Specifications

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