FM18L0870SG Ramtron, FM18L0870SG Datasheet

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FM18L0870SG

Manufacturer Part Number
FM18L0870SG
Description
SOP-28
Manufacturer
Ramtron
Datasheet

Specifications of FM18L0870SG

Date_code
10+
FM18L08
256Kb Bytewide FRAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Superior to Battery-Backed SRAM
Description
The FM18L08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and reads and writes like a RAM. It
provides data retention for 10 years while eliminating
the reliability concerns, functional disadvantages and
system design complexities of battery-backed SRAM
(BBSRAM). Fast write timing and high write
endurance make FRAM superior to other types of
nonvolatile memory.
In-system operation of the FM18L08 is very similar
to other RAM based devices. Read cycle and write
cycle times are equal. The FRAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM18L08 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM18L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a surface-mount package improves the
manufacturability of new designs, while the DIP
package facilitates simple design retrofits. Device
specifications are guaranteed over a temperature
range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. Production processing does not necessarily in-
clude testing of all parameters.
Rev 2.2
July 2004
Organized as 32,768 x 8 bits
10 year Data Retention
Unlimited Read/Write Cycles
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Resistant to Negative Voltage Undershoots
FM18L08-70-S
FM18L08-70-P
FM18L08-70-SG
FM18L08-70-PG
SRAM & EEPROM Compatible
Low Power Operation
Industry Standard Configuration
Pin Configuration
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns Access Time
140 ns Cycle Time
3.0V to 3.65V Operation
15 mA Active Current
15 A Standby Current
Industrial Temperature -40 C to +85 C
28-pin SOIC or DIP
“Green” Packaging Options
DQ0
DQ1
DQ2
VSS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
1850 Ramtron Drive, Colorado Springs, CO 80921
Ordering Information
70 ns access, 28-pin SOIC
70 ns access, 28-pin DIP
70 ns access, 28-pin “Green” SOIC
70 ns access, 28-pin “Green” DIP
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Ramtron International Corporation
(800) 545-FRAM, (719) 481-7000
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www.ramtron.com
VDD
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
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