FM18L08-70-SG Ramtron, FM18L08-70-SG Datasheet
FM18L08-70-SG
Manufacturer Part Number
FM18L08-70-SG
Description
Manufacturer
Ramtron
Specifications of FM18L08-70-SG
Case
SOP28
Date_code
10+
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FM18L08
256Kb Bytewide FRAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Superior to Battery-Backed SRAM
Description
The FM18L08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and reads and writes like a RAM. It
provides data retention for 45 years while eliminating
the reliability concerns, functional disadvantages and
system design complexities of battery-backed SRAM
(BBSRAM). Fast write timing and high write
endurance make FRAM superior to other types of
nonvolatile memory.
In-system operation of the FM18L08 is very similar
to other RAM based devices. Read cycle and write
cycle times are equal. The FRAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM18L08 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM18L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a surface-mount package improves the
manufacturability of new designs, while the DIP
package facilitates simple design retrofits. Device
specifications are guaranteed over a temperature
range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 3.4
July 2007
Organized as 32,768 x 8 bits
45 year Data Retention
Unlimited Read/Write Cycles
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Resistant to Negative Voltage Undershoots
FM18L08-70-TG
FM18L08-70-S
FM18L08-70-P
FM18L08-70-SG
FM18L08-70-PG
SRAM & EEPROM Compatible
Low Power Operation
Industry Standard Configuration
Pin Configurations
VDD
A11
A13
A14
A12
WE
NC
OE
NC
A9
A8
A7
A6
A5
A4
A3
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns Access Time
140 ns Cycle Time
3.0V to 3.65V Operation
15 mA Active Current
15 A Standby Current
Industrial Temperature -40 C to +85 C
32-pin “Green” TSOP Package
28-pin SOIC or DIP Package
“Green” Packaging Options
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
1850 Ramtron Drive, Colorado Springs, CO 80921
Ordering Information
70 ns access, 32-pin “Green” TSOP
70 ns access, 28-pin SOIC
70 ns access, 28-pin DIP
70 ns access, 28-pin “Green” SOIC
70 ns access, 28-pin “Green” DIP
Ramtron International Corporation
TSOP-I
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1 of 13
NC
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
NC
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