SST25VF016B504IS2AF Silicon Storage Technology, Inc, SST25VF016B504IS2AF Datasheet

SST25VF016B504IS2AF

Manufacturer Part Number

SST25VF016B504IS2AF

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST25LF080A334CS2AE.pdf (28 pages)

Specifications of SST25VF016B504IS2AF

Date_code

04+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SST25VF016B504IS2AF

Manufacturer:

SST

Quantity:

20 000

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FEATURES:

• Single Voltage Read and Write Operations

• Serial Interface Architecture

• High Speed Clock Frequency

• Superior Reliability

• Low Power Consumption:

• Flexible Erase Capability

• Fast Erase and Byte-Program:

PRODUCT DESCRIPTION

SST’s 25 series Serial Flash family features a four-wire,

SPI-compatible interface that allows for a low pin-count

package which occupies less board space and ultimately

lowers total system costs. The SST25VF016B devices are

enhanced with improved operating frequency and even

lower power consumption than the original SST25VFxxxA

devices. SST25VF016B SPI serial flash memories are

manufactured with SST’s proprietary, high-performance

CMOS SuperFlash technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

S71271-02-000

– 2.7-3.6V

– SPI Compatible: Mode 0 and Mode 3

– 50 MHz

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Read Current: 10 mA (typical)

– Standby Current: 5 µA (typical)

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

– Uniform 64 KByte overlay blocks

– Chip-Erase Time: 35 ms (typical)

– Sector-/Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 7 µs (typical)

SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory

1/06

16 Mbit SPI Serial Flash

SST25VF016B

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

• Auto Address Increment (AAI) Programming

• End-of-Write Detection

• Hold Pin (HOLD#)

• Write Protection (WP#)

• Software Write Protection

• Temperature Range

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

The SST25VF016B devices significantly improve perfor-

mance and reliability, while lowering power consumption.

The devices write (Program or Erase) with a single power

supply of 2.7-3.6V for SST25VF016B. The total energy

consumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies.

The SST25VF016B device is offered in both 8-lead SOIC

(200 mils) and 8-contact WSON (6mm x 5mm) packages.

See Figure 1 for pin assignments.

– Decrease total chip programming time over

– Software polling the BUSY bit in Status Register

– Busy Status readout on SO pin in AAI Mode

– Suspends a serial sequence to the memory

– Enables/Disables the Lock-Down function of the

– Write protection through Block-Protection bits in

– Commercial: 0°C to +70°C

– Industrial: -40°C to +85°C

– 8-lead SOIC (200 mils)

– 8-contact WSON (6mm x 5mm)

Byte-Program operations

without deselecting the device

status register

These specifications are subject to change without notice.

Data Sheet

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