SST29LE0101504INH Silicon Storage Technology, Inc, SST29LE0101504INH Datasheet

SST29LE0101504INH

Manufacturer Part Number

SST29LE0101504INH

Description

PLCC32

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST29LE010-150-4C-EH.pdf (30 pages)

Specifications of SST29LE0101504INH

Date_code

09+

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FEATURES:

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Fast Page-Write Operation

• Fast Read Access Time

• Latched Address and Data

PRODUCT DESCRIPTION

The SST29EE/VE010 are 128K x8 CMOS Page-Write

EEPROMs manufactured with SST’s proprietary, high-per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST29EE/VE010 write with a single

power supply. Internal Erase/Program is transparent to the

user. The SST29EE/VE010 conform to JEDEC standard

pinouts for byte-wide memories.

Featuring high performance Page-Write, the SST29EE/

VE010 provide a typical Byte-Write time of 39 µsec. The

entire memory, i.e., 128 Kbyte, can be written page-by-

page in as little as 5 seconds, when using interface features

such as Toggle Bit or Data# Polling to indicate the comple-

tion of a Write cycle. To protect against inadvertent write,

the SST29EE/VE010 have on-chip hardware and Software

Data Protection schemes. Designed, manufactured, and

tested for a wide spectrum of applications, the SST29EE/

VE010 are offered with a guaranteed Page-Write endur-

ance of 10,000 cycles. Data retention is rated at greater

than 100 years.

S71061-11-000

– 4.5-5.5V for SST29EE010

– 2.7-3.6V for SST29VE010

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 20 mA (typical) for 5V and

– Standby Current: 10 µA (typical)

– 128 Bytes per Page, 1024 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

– 4.5-5.5V operation: 70 and 90 ns

– 2.7-3.6V operation: 150 and 200 ns

1 Mbit (128K x8) Page-Write EEPROM

SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories

9/05

10 mA (typical) for 2.7V

SST29EE010 / SST29VE010

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Automatic Write Timing

• End of Write Detection

• Hardware and Software Data Protection

• Product Identification can be accessed via

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

The SST29EE/VE010 are suited for applications that

require convenient and economical updating of pro-

gram, configuration, or data memory. For all system

applications,

improve performance and reliability, while lowering

power consumption. The SST29EE/VE010 improve

flexibility while lowering the cost for program, data, and

configuration storage applications.

To meet high density, surface mount requirements, the

SST29EE/VE010 are offered in 32-lead PLCC and 32-lead

TSOP packages. A 600-mil, 32-pin PDIP package is also

available. See Figures 1, 2, and 3 for pin assignments.

Device Operation

The SST Page-Write EEPROM offers in-circuit electrical

write capability. The SST29EE/VE010 does not require

separate Erase and Program operations. The internally

timed Write cycle executes both erase and program trans-

parently to the user. The SST29EE/VE010 have industry

standard optional Software Data Protection, which SST

recommends always to be enabled. The SST29EE/VE010

are compatible with industry standard EEPROM pinouts

and functionality.

– Internal V

– Toggle Bit

– Data# Polling

Software Operation

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)

– 32-pin PDIP

the

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

SST29EE/VE010

Data Sheet

significantly

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