SST29SF040554CNHE Silicon Storage Technology, Inc, SST29SF040554CNHE Datasheet

SST29SF040554CNHE

Manufacturer Part Number

SST29SF040554CNHE

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheets

1.SST29SF040554CNHE.pdf (25 pages)

2.SST29SF040554CNHE.pdf (26 pages)

Specifications of SST29SF040554CNHE

Date_code

11+

Current page: 1 of 25
Download datasheet (394Kb)

FEATURES:

• Organized as 256K x8 / 512K x8

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption:

• Sector-Erase Capability

• Fast Read Access Time:

• Latched Address and Data

PRODUCT DESCRIPTION

The SST29SF020/040 and SST29VF020/040 are 256K

x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-

tured with SST’s proprietary, high-performance CMOS

SuperFlash technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST29SF020/040 devices write (Program or Erase)

with a 4.5-5.5V power supply. The SST29VF020/040

devices write (Program or Erase) with a 2.7-3.6V power

supply. These devices conform to JEDEC standard pin

assignments for x8 memories.

Featuring

SST29SF020/040 and SST29VF020/040 devices pro-

vide a maximum Byte-Program time of 20 µsec. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at least

10,000 cycles. Data retention is rated at greater than 100

years.

The SST29SF020/040 and SST29VF020/040 devices

are suited for applications that require convenient and eco-

nomical updating of program, configuration, or data mem-

S71160-13-000

– 4.5-5.5V for SST29SF020/040

– 2.7-3.6V for SST29VF020/040

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 10 mA (typical)

– Standby Current:

– Uniform 128 Byte sectors

– 55 ns for SST29SF020/040

– 70 ns for SST29VF020/040

30 µA (typical) for SST29SF020/040

1 µA (typical) for SST29VF020/040

high

2 Mbit / 4 Mbit (x8) Small-Sector Flash

performance

10/06

Byte-Program, Small-Sector flash memories

SST29SF/VF020 / 0402Mb / 4Mb (x8)

SST29SF020 / SST29SF040

SST29VF020 / SST29VF040

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Byte-Program:

• Automatic Write Timing

• End-of-Write Detection

• TTL I/O Compatibility for SST29SF020/040

• CMOS I/O Compatibility for SST29VF020/040

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

ory. For all system applications, they significantly improve

performance and reliability, while lowering power consump-

tion. They inherently use less energy during Erase and

Program than alternative flash technologies. The total

energy consumed is a function of the applied voltage, cur-

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less than

alternative flash technologies. They also improve flexibility

while lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times independent of the number of Erase/Program

cycles that have occurred. Therefore, the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST29SF020/040 and SST29VF020/040 devices are

offered in 32-lead PLCC and 32-lead TSOP packages. The

pin assignments are shown in Figures 2 and 3.

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST29SF040554CNHE

Related keywords

SST29SF040554CNHE datasheet
SST29SF040554CNHE data sheet
SST29SF040554CNHE pdf datasheet
SST29SF040554CNHE component
SST29SF040554CNHE part
SST29SF040554CNHE distributor
SST29SF040554CNHE RoHS
SST29SF040554CNHE datasheet download