GLS29VF040-70-4I-WHE Greenliant, GLS29VF040-70-4I-WHE Datasheet

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GLS29VF040-70-4I-WHE

Manufacturer Part Number
GLS29VF040-70-4I-WHE
Description
Manufacturer
Greenliant
Datasheet

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Part Number:
GLS29VF040-70-4I-WHE
Manufacturer:
SST
Quantity:
1 000
FEATURES:
• Organized as 256K x8 / 512K x8
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption:
• Sector-Erase Capability
• Fast Read Access Time:
• Latched Address and Data
PRODUCT DESCRIPTION
The GLS29SF020/040 and GLS29VF020/040 are 256K
x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-
tured with high-performance SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The GLS29SF020/040 devices
write (Program or Erase) with a 4.5-5.5V power supply.
The GLS29VF020/040 devices write (Program or Erase)
with a 2.7-3.6V power supply. These devices conform to
JEDEC standard pin assignments for x8 memories.
Featuring
GLS29SF020/040 and GLS29VF020/040 devices pro-
vide a maximum Byte-Program time of 20 µsec. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at
least 10,000 cycles. Data retention is rated at greater than
100 years.
©2010 Greenliant Systems, Ltd.
– 4.5-5.5V for GLS29SF020/040
– 2.7-3.6V for GLS29VF020/040
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 10 mA (typical)
– Standby Current:
– Uniform 128 Byte sectors
– 55 ns for GLS29SF020/040
– 70 ns for GLS29VF020/040
30 µA (typical) for GLS29SF020/040
1 µA (typical) for GLS29VF020/040
2 Mbit / 4 Mbit (x8) Small-Sector Flash
high
performance
GLS29SF020 / GLS29SF040
GLS29VF020 / GLS29VF040
Byte-Program, Small-Sector flash memories
GLS29SF/VF020 / 0402Mb / 4Mb (x8)
Byte-Program,
www.greenliant.com
the
• Fast Erase and Byte-Program:
• Automatic Write Timing
• End-of-Write Detection
• TTL I/O Compatibility for GLS29SF020/040
• CMOS I/O Compatibility for GLS29VF020/040
• JEDEC Standard
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant
The GLS29SF020/040 and GLS29VF020/040 devices
are suited for applications that require convenient and eco-
nomical updating of program, configuration, or data mem-
ory. For all system applications, they significantly improve
performance and reliability, while lowering power consump-
tion. They inherently use less energy during Erase and
Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash technologies. They also improve flexibility
while lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
– Internal V
– Toggle Bit
– Data# Polling
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
4 seconds (typical) for GLS29SF/VF020
8 seconds (typical) for GLS29SF/VF040
PP
Generation
S71160-15-00005/10
Data Sheet

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