K4D28163HD-TC36 SAMSUNG [Samsung semiconductor], K4D28163HD-TC36 Datasheet - Page 15
![no-image](/images/no-image-200.jpg)
K4D28163HD-TC36
Manufacturer Part Number
K4D28163HD-TC36
Description
128Mbit DDR SDRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4D28163HD-TC36.pdf
(16 pages)
- Current page: 15 of 16
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COMMAND
( A 0 ~ A 1 1 )
K4D28163HD-TC60
K4D28163HD
Simplified Timing @ BL=4
B A [ 1 : 0 ]
CK, CK
A 1 0 / A P
166MHz ( 6.0ns )
A D D R
D Q S
W E
D M
DQ
Frequency
ACTIVEA
B A a
Ra
Ra
Ra
0
1
tRCD
2
Normal Write Burst
WRITEA
Cas Latency
BAa
Ca
3
(@ BL=4)
tRAS
3
Da0 Da1 Da2 Da3
4
5
tRC
tRC
10
6
7
PRECH
tRFC
B A a
12
8
9
tRP
tRAS
7
10
- 15 -
ACTIVEA
BAa
R a
Multi Bank Interleaving Write Burst
Ra
1 1
tRCD
tRRD
3
1 2
ACTIVEB WRITEA
R b
BAb
Rb
(@ BL=4)
1 3
C a
B A a
tRP
1 4
3
Da0 Da1 Da2 Da3
1 5
WRITEB
tRRD
C b
BAb
1 6
2
128M DDR SDRAM
Db0 Db1
17
Db2
tDAL
Rev. 1.4(Aug. 2002)
Db3
1 8
6
1 9
Unit
tCK
20
2 1
2 2
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