K4S643232E-TE50 SAMSUNG [Samsung semiconductor], K4S643232E-TE50 Datasheet - Page 2
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K4S643232E-TE50
Manufacturer Part Number
K4S643232E-TE50
Description
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4S643232E-TE50.pdf
(12 pages)
K4S643232E-TE/N
CMOS SDRAM
Revision History
Revision 1.4 (December 4, 2001)
• Not supported 90-Ball FBGA
Revision 1.3 (October 24, 2001)
• Removed CAS Latency 1 from the spec.
Revision 1.2 (August 7, 2001) -
Target
• Added CAS Latency 1
Revision 1.1 (July 6, 2001)
• Added K4S643232E-T/S(E/N)50
Revision 1.0 (April 6, 2001)
Revision 0.0 (March 21, 2001)
• Initial draft
• Extended temperature (-25 c ~ 85 c )
• 3.3V Power supply (VDD &VDDQ)
• Supported 90-ball FBGA as well as 86 - TSOP
Rev. 1.4 (Dec. 2001)
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