K4H560438E-UC SAMSUNG [Samsung semiconductor], K4H560438E-UC Datasheet - Page 16

• Manufacturer Part Number: K4H560438E-UC
• Description: 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
• Manufacturer: SAMSUNG [Samsung semiconductor]

System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure
proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
PARAMETER
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & Address input pulse width
DQ & DM input pulse width
Power down exit time
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
Output DQS valid window
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
Input Slew Rate
Input Slew Rate
0.5 V/ns
0.4 V/ns
0.3 V/ns
0.5 V/ns
0.4 V/ns
0.3 V/ns
Parameter
AC CHARACTERISTICS
+100
+150
+50
tDS
+75
tIS
0
0
Symbol
tWPST
tPDEX
tXSNR
tXSRD
tDIPW
tMRD
tREFI
tQHS
tRAP
tDAL
tIPW
tQH
tDS
tDH
tHP
+150
tDH
+75
tIH
0
0
0
0
(tWR/tCK)
or tCHmin
(tRP/tCK)
(DDR333@CL=2.5))
tCLmin
-tQHS
Min
0.45
0.45
1.75
200
tHP
2.2
0.4
12
75
18
DCSLEW
6
+
SYMBOL
B3
Units
Units
ps
ps
ps
ps
ps
ps
Max
0.55
7.8
0.6
-
-
TBD
MIN
(tWR/tCK)
DDR333
or tCHmin
(tRP/tCK)
(DDR266@CL=2.0)
tCLmin
-tQHS
Min
1.75
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
Notes
Notes
MAX
TBD
k
k
k
AA
i
i
i
Max
0.75
7.8
0.6
-
-
TBD
MIN
DDR266
(tWR/tCK)
or tCHmin
(tRP/tCK)
(DDR266@CL=2.0)
tCLmin
-tQHS
Min
1.75
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
MAX
TBD
A2
Max
0.75
7.8
0.6
Rev. 1.1 October, 2004
-
-
MIN
0.5
DDR200
or tCHmin
(tWR/tCK)
(tRP/tCK)
(DDR266@CL=2.5))
tCLmin
-tQHS
Min
1.75
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
MAX
4.0
DDR SDRAM
B0
Max
0.75
7.8
0.6
-
-
Units
V/ns
Unit
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
Notes
a, m
10, 11
Note
j, k
j, k
13
11
11
8
8
4
2