K4H560438E-UC SAMSUNG [Samsung semiconductor], K4H560438E-UC Datasheet - Page 21
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K4H560438E-UC
Manufacturer Part Number
K4H560438E-UC
Description
256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H560438E-UC.pdf
(23 pages)
DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
Voltage
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
(V)
Typical
12.2
18.1
24.1
29.8
34.6
39.4
43.7
47.5
51.3
54.1
56.2
57.9
59.3
60.1
60.5
61.0
61.5
62.0
62.5
62.9
63.3
63.8
64.1
64.6
64.8
65.0
Low
6.0
Pulldown Current (mA)
Typical
100.9
101.9
102.8
103.8
104.6
105.4
High
13.5
20.1
26.6
33.0
39.1
44.2
49.8
55.2
60.3
65.2
69.9
74.2
78.4
82.3
85.9
89.1
92.2
95.3
97.2
99.1
6.8
Table 8. Full Strength Driver Characteristics
Minimum
13.8
18.4
23.0
27.7
32.2
36.8
39.6
42.6
44.8
46.2
47.1
47.4
47.7
48.0
49.4
49.6
49.8
49.9
50.0
50.2
50.4
50.5
48.4
48.9
49.1
4.6
9.2
Maximum
103.8
108.4
112.1
115.9
119.6
123.3
126.5
129.5
132.4
135.0
137.3
139.2
140.8
18.2
26.0
33.9
41.8
49.4
56.8
63.2
69.9
76.3
82.5
88.3
93.8
99.1
9.6
Typical
-12.2
-18.1
-24.0
-29.8
-34.3
-38.1
-41.1
-41.8
-46.0
-47.8
-49.2
-50.0
-50.5
-50.7
-51.0
-51.1
-51.3
-51.5
-51.6
-51.8
-52.0
-52.2
-52.3
-52.5
-52.7
-52.8
Low
-6.1
Typical
-101.3
-107.1
-124.0
-129.3
-134.6
-139.9
-145.2
-150.5
-155.3
-160.1
pullup Current (mA)
-112.4
-118.7
-14.5
-21.2
-27.7
-34.1
-40.5
-46.9
-53.1
-59.4
-65.5
-71.6
-95.5
-77.6
-83.6
-89.7
High
-7.6
Rev. 1.1 October, 2004
Minimum
-13.8
-18.4
-23.0
-27.7
-32.2
-36.0
-38.2
-38.7
-39.0
-39.2
-39.4
-39.6
-39.9
-40.1
-40.2
-40.3
-40.4
-40.5
-40.6
-40.7
-40.8
-40.9
-41.0
-41.1
-41.2
DDR SDRAM
-4.6
-9.2
Maximum
-100.6
-108.1
-123.0
-130.4
-136.7
-144.2
-150.5
-156.9
-163.2
-169.6
-176.0
-181.3
-187.6
-192.9
-198.2
-115.5
-10.0
-20.0
-29.8
-38.8
-46.8
-54.4
-61.8
-69.5
-77.3
-85.2
-93.0