K4H560438J SAMSUNG [Samsung semiconductor], K4H560438J Datasheet - Page 14

• Manufacturer Part Number: K4H560438J
• Description: 256Mb J-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note :
1. V
2. The value of V
K4H560438J
K4H560838J
K4H561638J
16.0 AC Operating Conditions
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and V
The area between the undershoot signal and GND must be less than or equal to
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
IX
is expected to equal 0.5*V
Parameter/Condition
Parameter
-1
-2
-3
-4
-5
5
4
3
2
1
0
DDQ
Maximum Amplitude = 1.5V
0
of the transmitting device and must track variations in the dc level of the same.
DD
AC overshoot/Undershoot Definition
0.5
0.6875
must be less than or equal to
VDD
1.0
Area
Overshoot
1.5
2.0
2.5
14 of 24
Symbol
V
V
V
V
3.0
IH
IL
ID
IX
Tims(ns)
(AC)
(AC)
(AC)
(AC)
3.5
4.0
4.5
0.5*V
V
5.0
Maximum Amplitude = 1.5V
REF
Min
5.5
0.7
DDQ
undershoot
+ 0.31
GND
6.0
-0.2
6.3125
DDR400
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
6.5
0.5*V
7.0
V
V
REF
DDQ
Max
DDQ
- 0.31
Rev. 1.12 August 2008
+0.6
Specification
+0.2
DDR333
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
DDR SDRAM
Unit
V
V
V
V
DDR200/266
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
Note
1
2