M368L2923CUN-CLCC SAMSUNG [Samsung semiconductor], M368L2923CUN-CLCC Datasheet - Page 16
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M368L2923CUN-CLCC
Manufacturer Part Number
M368L2923CUN-CLCC
Description
DDR SDRAM Unbuffered Module
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M368L2923CUN-CLCC.pdf
(25 pages)
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333 devices to ensure proper system perfor-
mance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
256MB, 512MB, 1GB Unbuffered DIMM
PARAMETER
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
PARAMETER
Output Slew Rate Matching Ratio (Pullup to Pulldown)
Slew Rate Characteristic
Slew Rate Characteristic
Input Slew Rate
Input Slew Rate
Delta Slew Rate
+/- 0.25 V/ns
+/- 0.0 V/ns
+/- 0.5 V/ns
Pullup Slew Rate
Pullup Slew Rate
0.5 V/ns
0.4 V/ns
0.3 V/ns
0.5 V/ns
0.4 V/ns
0.3 V/ns
Pulldown slew
Pulldown slew
AC CHARACTERISTICS
AC CHARACTERISTICS
+100
∆tDS
+150
∆tDS
+100
∆tIS
+50
+75
+50
0
0
0
Typical Range
Typical Range
1.2 ~ 2.5
1.2 ~ 2.5
1.2 ~ 2.5
1.2 ~ 2.5
(V/ns)
(V/ns)
∆tDH
∆tDH
+150
+100
∆tIH
+75
+50
0
0
0
0
0
Minimum
Minimum
(V/ns)
(V/ns)
1.0
0.7
1.0
0.7
DCSLEW
SYMBOL
TBD
MIN
DDR400
Units
Units
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
Maximum
Maximum
MAX
TBD
TBD
MIN
(V/ns)
(V/ns)
4.5
4.5
5.0
5.0
DDR400
Notes
Notes
Notes
TBD
MIN
MAX
TBD
k
k
k
i
i
i
j
j
j
DDR333
a,c,d,f,g,h
b,c,d,f,g,h
a,c,d,f,g,h
b,c,d,f,g,h
Notes
Notes
MAX
TBD
TBD
MIN
DDR333
MAX
TBD
Notes
e,m
Rev. 1.0 February. 2005
Units
V/ns
Notes
a, m
DDR SDRAM