M391B1G73BH0 SAMSUNG [Samsung semiconductor], M391B1G73BH0 Datasheet - Page 26

• Manufacturer Part Number: M391B1G73BH0
• Description: 240pin Unbuffered DIMM based on 4Gb B-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

Unbuffered DIMM
17. Electrical Characteristics and AC timing
17.1 Refresh Parameters by Device Density
NOTE :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or requirements referred to in
17.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
17.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
[ Table 15 ] DDR3-800 Speed Bins
All Bank Refresh to active/refresh cmd time
Average periodic refresh interval
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6 / CWL = 5
Supported CL Settings
Supported CWL Settings
Bin (CL - tRCD - tRP)
this material.
(0 °C<T
Parameter
DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
Speed
tRCD
tRRD
tFAW
tRAS
tRP
tRC
CL
CASE
Parameter
Parameter
≤95 °C, V
CL-nRCD-nRP
DDR3-800
Speed
DDQ
6-6-6
37.5
52.5
min
15
15
10
40
6
= 1.5V ± 0.075V; V
tREFI
DDR3-1066
13.13
13.13
50.63
7-7-7
37.5
37.5
min
7.5
tCK(AVG)
7
Symbol
tRCD
tRAS
datasheet
85 °C < T
tRC
tAA
tRP
DD
0 °C ≤ T
Symbol
tRFC
= 1.5V ± 0.075V)
CASE
CASE
DDR3-1333
≤ 85°C
≤ 95°C
9-9-9
- 26 -
13.5
13.5
49.5
min
6.0
36
30
9
52.5
37.5
min
2.5
15
15
15
1Gb
110
7.8
3.9
DDR3-800
6 - 6 - 6
6
5
DDR3-1600
11-11-11
13.75
13.75
48.75
min
6.0
35
30
2Gb
11
160
7.8
3.9
9*tREFI
max
3.3
20
-
-
-
4Gb
260
7.8
3.9
DDR3-1866
13-13-13
13.91
13.91
47.91
min
5.0
13
34
27
DDR3 SDRAM
8Gb
350
7.8
3.9
Units
nCK
nCK
ns
ns
ns
ns
ns
ns
Units
Units
tCK
ns
μs
μs
ns
ns
ns
ns
ns
ns
NOTE
Rev. 1.3
1,2,3
NOTE
NOTE
1