M378B2873GB0 SAMSUNG [Samsung semiconductor], M378B2873GB0 Datasheet - Page 14
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M378B2873GB0
Manufacturer Part Number
M378B2873GB0
Description
240pin Unbuffered DIMM based on 1Gb G-die
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M378B2873GB0.pdf
(41 pages)
Unbuffered DIMM
10. Absolute Maximum Ratings
10.1 Absolute Maximum DC Ratings
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
3. V
10.2 DRAM Component Operating Temperature Range
NOTE :
1. Operating Temperature T
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main-
3. Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaranteed in this range, but the
11. AC & DC Operating Conditions
11.1 Recommended DC Operating Conditions (SSTL-15)
NOTE:
1. Under all conditions V
2. V
equal to or less than 300mV.
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
JESD51-2.
tained between 0-85°C under all operating conditions
following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature
DD
DDQ
V
Symbol
Range capability (MR2 A6 = 0b and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.
IN,
Symbol
V
T
and V
V
V
Symbol
DDQ
STG
V
tracks with V
V
T
DD
DDQ
DD
OPER
OUT
DDQ
must be within 300mV of each other at all times; and V
DD
Supply Voltage
Supply Voltage for Output
. AC parameters are measured with V
DDQ
Voltage on V
Voltage on V
Voltage on any pin relative to V
OPER
must be less than or equal to V
Storage Temperature
is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document
Parameter
DDQ
DD
Parameter
pin relative to V
pin relative to V
Operating Temperature Range
Parameter
DD
SS
DD
SS
SS
.
and V
datasheet
DDQ
REF
tied together.
must be not greater than 0.6 x V
1.425
1.425
Min.
- 14 -
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-55 to +100
Rating
Rating
Typ.
1.5
1.5
DDQ
0 to 95
rating
, When V
DD
and V
1.575
1.575
Max.
DDQ
are less than 500mV; V
DDR3 SDRAM
Unit
°C
Units
V
V
Units
°C
V
V
V
NOTE
1, 2, 3
NOTE
Rev. 1.2
REF
1,2
1,2
NOTE
1, 2
1,3
1,3
1
may be