BS870_ DIODES [Diodes Incorporated], BS870_ Datasheet - Page 2

• Manufacturer Part Number: BS870_
• Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics
Marking Information
Date Code Key
DS11302 Rev. 11 - 2
Ordering Information
Notes:
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
3. Short duration test pulse used to minimize self-heating effect.
Month
Code
Code
Year
BS870-7-F
Characteristic
Device
1998
Jan
J
1
(Note 4)
1999
Feb
K
2
@ T
March
2000
L
3
A
= 25 C unless otherwise specified
K70
2001
Apr
M
4
www.diodes.com
Symbol
R
BV
V
t
I
t
D(OFF)
DS (ON)
I
I
D(ON)
C
D(ON)
C
C
GS(th)
g
DSS
GSS
FS
oss
DSS
iss
rss
2002
May
2 of 4
N
5
Packaging
SOT-23
Min
1.0
60
80
2003
K70 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Jun
P
6
Typ
2.0
3.5
1.0
2.0
2.0
5.0
80
22
11
2004
Jul
R
7
Max
0.5
3.0
5.0
0.5
5.0
50
25
20
20
10
2005
Aug
S
8
Unit
mS
µA
nA
pF
pF
pF
ns
ns
V
V
A
2006
Sep
T
9
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
GS
DS
GS
DS
GS
GS
DS
DS
ES
DS
3000/Tape & Reel
= 10V, R
= 25V, V
=10V, I
= 0V, I
= 15V, V
= V
= 10V, I
= 10V, V
= 10V, V
= 10V, R
2007
Shipping
Oct
U
O
Test Condition
GS
, I
D
D
D
D
= 100 A
GS
L
DS
GS
D
= 0.2A
= 250 A
= 0.2A
DS
= 150 ,
= 100
= 0V
= 0V
2008
= 7.5V
Nov
= 0V
V
N
BS870
2009
Dec
W
D