BS870_ DIODES [Diodes Incorporated], BS870_ Datasheet - Page 3

• Manufacturer Part Number: BS870_
• Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

DS11302 Rev. 11 - 2
250
1.0
0.8
0.6
0.4
0.2
350
300
200
150
100
2.0
1.5
1.0
0.5
50
0
0
0
-55
0
0
V = 10V
GS
Fig. 3 On-Resistance vs Junction Temperature
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
-30
25
V
T , JUNCTION TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
DS
Fig. 1 On-Region Characteristics
1
j
A
Fig. 5, Max Power Dissipation vs
,
50
DRAIN-SOURCE VOLTAGE (V)
-5
10V
Ambient Temperature
V
GS
75
20
2
= 10V, I = 0.5A
100 125
45
D
3
V
70
GS
= 5.0V, I = 0.05A
150
95
4
D
175
120
5.0V
5.5V
2.1V
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200
145
5
3 of 4
7
6
5
4
3
2
0
6
5
4
3
2
1
0
1
0
0
Fig. 4 On-Resistance vs. Gate-Source Voltage
I = 50mA
D
2
Fig. 2 On-Resistance vs Drain Current
V
GS
0.2
, GATE TO SOURCE VOLTAGE (V)
4
V
GS
I , DRAIN CURRENT (A)
D
= 5.0V
6
I = 500mA
D
0.4
V
8
GS
= 10V
10
0.6
12
14
0.8
T = 25°C
j
16
BS870
1.0
18