M366S1654CTS-C1H SAMSUNG [Samsung semiconductor], M366S1654CTS-C1H Datasheet
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M366S1654CTS-C1H
Related parts for M366S1654CTS-C1H
M366S1654CTS-C1H Summary of contents
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... GENERAL DESCRIPTION The Samsung M366S1654CTS bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1654CTS consists of four CMOS bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM ...
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... M366S1654CTS PIN CONFIGURATION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable A0 ~ A12 Address BA0 ~ BA1 Bank select address RAS Row address strobe CAS Column address strobe WE Write enable DQM0 ~ 7 Data input/output mask DQ0 ~ 63 Data input/output V /V Power supply/ground ...
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... M366S1654CTS FUNCTIONAL BLOCK DIAGRAM CS0 DQM0 LDQM DQ0 DQ0 DQ1 DQ1 DQ2 DQ2 DQ3 DQ3 DQ4 DQ4 DQ5 DQ5 DQ6 DQ6 DQ7 DQ7 UDQM DQM1 DQ8 DQ8 DQ9 DQ9 DQ10 DQ10 DQ11 DQ11 DQ12 DQ12 DQ13 DQ13 DQ14 DQ14 DQ15 DQ15 ...
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... M366S1654CTS ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... M366S1654CTS DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active) I CC2 Precharge standby current in power-down mode I PS CC2 I CC2 Precharge standby current in non power-down mode I NS CC2 I CC3 Active standby current in power-down mode I PS CC3 ...
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... M366S1654CTS AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter ...
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... M366S1654CTS AC CHARACTERISTICS (AC operating conditions unless otherwise noted) REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter Symbol CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width ...
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... M366S1654CTS SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable Burst stop ...
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... M366S1654CTS PACKAGE DIMENSIONS 0.118 (3.000) .118DIA 0.004 (3.000DIA 0.100) 0.350 (8.890) .450 (11.430) 0.250 (6.350) 0.123 (3.125 0.079 0.004 (2.000 0.100) Detail A Tolerances : .005(.13) unless otherwise specified The used device is 16Mx16 SDRAM, TSOP SDRAM Part No. : K4S561632C 5.250 (133.350) 5.014 (127.350 0.250 ...
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... M366S1654CTS M366S1654CTS-L7C/L7A/L1H/L1L, C7C/C7A/C1H/C1L Organization : 16Mx64 Composition : 16Mx16 * 4 Used component part # : K4S561632C-TL7C/7A/1H/1L,TC7C/7A/1H/ rows in module : 1 Row # of banks in component : 4 banks Feature : 1,000mil height & single sided component Refresh : 8K/64ms Contents ; Byte # Function Described bytes written into serial memory at module manufacturer 1 Total # of bytes of SPD memory device ...
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... M366S1654CTS Byte # Function Described 35 Data signal input hold time 36~61 Superset information (maybe used in future) 62 SPD data revision code 63 Checksum for bytes Manufacturer JEDEC ID code 65~71 ...... Manufacturer JEDEC ID code 72 Manufacturing location 73 Manufacturer part # (Memory module) 74 Manufacturer part # (DIMM Configuration) 75 Manufacturer part # (Data bits) 76 ...