M366S1654CTS-C1H SAMSUNG [Samsung semiconductor], M366S1654CTS-C1H Datasheet - Page 5
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M366S1654CTS-C1H
Manufacturer Part Number
M366S1654CTS-C1H
Description
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M366S1654CTS-C1H.pdf
(11 pages)
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
M366S1654CTS
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
= 10ns
= 10ns
A
V
V
= 0 to 70 C)
V
V
IH
IH
IH
CC
CC
IL
IL
/V
(min), t
(min), t
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
PC133/PC100 Unbuffered DIMM
CC
CC
= 10ns
= 10ns
/V
=
=
SSQ
)
C
L
- 7C
440
560
880
-7A
400
560
800
Version
Rev. 0.1 Sept. 2001
120
100
80
40
24
24
12
8
8
6
-1H
400
520
760
400
520
760
-1L
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
1
2