K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 28

• Manufacturer Part Number: K9F4G08U0M
• Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1M
K9F4G08U0M
Two-Plane Block Erase Operation
CLE
CE
WE
ALE
RE
I/O
R/B
R/B
I/O
* For Two-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Two-Plane Block Erase Operation
0
X
~
7
Block Erase Setup Command
60h
A
A
A
12
18
19
t
60h
Row Add1,2,3
WC
~ A
~ A
Address
17 :
29 :
:
Fixed ’Low’
Fixed ’Low’
Fixed ’Low’
Row Add1
2 times repeat
Row Address
Row Add2 Row Add3
60h
A
A
A
12
18
19
Row Add1,2,3
~ A
~ A
A
9
Address
D0h
17 :
29 :
~ A
:
valid
Erase Confirm Command
Fixed ’High’
Fixed ’Low’
25
D0h
t
WB
D0h
28
Busy
t
BERS
t
BERS
Read Status Command
FLASH MEMORY
70h
70h
I/O 0 = 0 Successful Erase
I/O 1 =1 Error in Erase
Advance
I/O 0