K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 7

• Manufacturer Part Number: K9F4G08U0M
• Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1M
K9F4G08U0M
Figure 1. K9F4G08U0M Functional Block Diagram
Figure 2. K9F4G08U0M Array Organization
V
V
256K Pages
(=4,096 Blocks)
CC
SS
NOTE : Column Address : Starting Address of the Register.
2nd Cycle
CE
RE
WE
3rd Cycle
1st Cycle
4th Cycle
5th Cycle
Command
A
A
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
12
0
- A
- A
11
29
I/O 0
A
A
A
A
A
12
20
28
0
8
& High Voltage
CLE
2K Bytes
Page Register
Control Logic
2K Bytes
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Command
Generator
Register
I/O 1
A
A
A
A
A
ALE
13
21
29
1
9
WP
I/O 2
A
A
A
A
*L
10
14
22
2
64 Bytes
64 Bytes
I/O 3
A
A
A
A
*L
11
15
23
3
7
I/O 4
A
A
A
*L
*L
16
24
I/O 0 ~ I/O 7
4
(2,048 + 64)Byte x 262,144
Global Buffers
Data Register & S/A
I/O Buffers & Latches
4,096M + 128M Bit
I/O 5
A
A
A
*L
*L
17
25
NAND Flash
5
8 bit
Y-Gating
ARRAY
1 Block = 64 Pages
(128K + 4k) Byte
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
1 Device = (2K+64)B x 64Pages x 4,096 Blocks
I/O 6
A
A
A
*L
*L
18
26
6
= (128K + 4K) Bytes
= 4,224 Mbits
I/O 7
A
A
A
*L
*L
FLASH MEMORY
19
27
7
Output
Driver
Column Address
Column Address
Row Address
Row Address
Row Address
V
V
CC
SS
Advance
I/0 7
I/0 0