HX6356 ETC1 [List of Unclassifed Manufacturers], HX6356 Datasheet
HX6356
Related parts for HX6356
HX6356 Summary of contents
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... Typical Operating power < 15 mW/MHz • Asynchronous Operation 12 rad(Si)/s • CMOS or TTL Compatible I/O • Single 5 V ± 10% Power Supply • Packaging Options - 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.) - 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.) ™ IV (Radiation Insen- ™ IV process is a HX6356 ...
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... HX6356 FUNCTIONAL DIAGRAM A:0-8,12- NCS NWE NOE A:9-11 SIGNAL DEFINITIONS A: 0-14 Address input pins which select a particular eight-bit word within the memory array. DQ: 0-7 Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write operation. NCS Negative chip select, when at a low level allows normal read or write operation. When at a high level NCS forces the SRAM to a precharge condition, holds the data output drivers in a high impedance state and disables all input buffers except CE ...
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... Limits (2) Units ≥1x10 6 rad(SiO ≥1x10 11 rad(Si)/s ≥1x10 12 rad(Si)/s -10 <1x10 upsets/bit-day ≥1x10 14 N/cm 3 HX6356 Test Conditions ) T =25° Pulse width ≤1 µs Pulse width ≤50 ns, X-ray, VDD=6 =25° =125°C, Adams 90% A worst case environment 1 MeV equivalent energy, 2 Unbiased, T =25° ...
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... HX6356 ABSOLUTE MAXIMUM RATINGS (1) Symbol VDD Positive Supply Voltage (2) VPIN Voltage on Any Pin (2) TSTORE Storage Temperature (Zero Bias) TSOLDER Soldering Temperature (5 Seconds) PD Total Package Power Dissipation (3) IOUT DC or Average Output Current VPROT ESD Input Protection Voltage (4) Θ JC Thermal Resistance (Jct-to-Case) ...
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... V -0.1 DD 2.9 V Valid high + output Vref1 - 249Ω Vref2 + Valid low - output C L >50 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ 5 HX6356 Units Test Conditions Max VIH=VDD, IO=0 1.5 mA VIL=VSS, f=0MHz NCS=VDD, IO=0, 1.5 mA f=40 MHz f=1 MHz, IO=0, CE=VIH=VDD 4.0 mA NCS=VIL=VSS (3) f=1 MHz, IO=0, CE=VIH=VDD 4.0 mA NCS=VIL=VSS (3) µA +1 VSS≤VI≤VDD VSS≤ ...
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... HX6356 READ CYCLE AC TIMING CHARACTERISTICS ( ...
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... AVAVW T T WLWH T WLQZ T SLWH T EHWH 7 HX6356 ...
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... HX6356 DYNAMIC ELECTRICAL CHARACTERISTICS Read Cycle The RAM is asynchronous in operation, allowing the read cycle to be controlled by address, chip select (NCS), or chip enable (CE) (refer to Read Cycle timing diagram). To perform a valid read operation, both chip select and output enable (NOE) must be low and chip enable and write enable (NWE) must be high ...
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... Groups B & D testing as outlined in MIL-STD-883, TM 5005, Class S. The product is qualified by following a screening and testing flow to meet the customer’s requirements. Quality conformance testing is performed as an option on all production lots to ensure the ongoing reliability of the product. 9 HX6356 CMOS I/O Configuration VDD/2 0.5 V VDD/2 VDD-0.4V High Z ...
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... HX6356 PACKAGING The 32K x 8 SRAM is offered in two custom 36-lead flat packs (FP). The packages are constructed of multilayer ceramic ( and feature internal power and ground 2 3 planes. The 36-lead flat packs also feature a non-conduc- tive ceramic tie bar on the lead frame. The tie bar allows ...
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... F17 VSS 11 HX6356 b (width) e (pitch) All dimensions are in inches A 0.085 ± 0.010 b 0.008 ± 0.002 C 0.005 to 0.0075 D 0.650 ± 0.010 E 0.630 ± 0.007 e 0.025 ± 0.002 [ 0.425 ± 0.005 [2] G 0.525 ± 0.005 H 0.135 ± ...
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... HX6356 ORDERING INFORMATION ( 6356 PART NUMBER PROCESS X=SOI PACKAGE DESIGNATION X=36-Lead FP (Bottom Braze) SOURCE P=36-Lead FP (Top Braze) H=HONEYWELL K=Known Good Die - = Bare Die (No Package) (1) Orders may be faxed to 612-954-2051. Please contact our Customer Logistics Department at 612-954-2888 for further information. (2) Engineering Device description: Parameters are tested from -55 to 125° burn-in, no radiation guaranteed. ...