KMM366S1623CT-G8 SAMSUNG [Samsung semiconductor], KMM366S1623CT-G8 Datasheet - Page 4

• Manufacturer Part Number: KMM366S1623CT-G8
• Description: PC100 SDRAM MODULE Preliminary
• Manufacturer: SAMSUNG [Samsung semiconductor]

KMM366S1623CT
Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Note :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current (Inputs)
Input leakage current (I/O pins)
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. Dout is disabled, 0V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
DD
Parameter
supply relative to Vss
Pin
(V
V
DD
IN
= 3.3V, T
V
DDQ.
V
OUT
A
V
= 23 C, f = 1MHz, V
V
DDQ.
Symbol
DD
V
V
V
V
, V
I
I
OH
OL
IL
IL
IH
IL
DDQ
V
Symbol
V
Symbol
DD
C
C
C
IN
C
C
C
T
C
DQM
ADD
CKE
OUT
CLK
, V
I
P
, V
STG
CS
OS
IN
Min
-0.3
-16
3.0
2.0
2.4
D
-3
REF
-
OUT
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
= 0 to 70 C)
200 mV)
Typ
3.3
3.0
0
-
-
-
-
Min
60
60
35
25
25
15
10
V
-55 ~ +150
Preliminary
PC100 SDRAM MODULE
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
16
Value
3
-
+0.3
16
50
Max
90
90
55
35
35
25
20
Unit
uA
uA
REV. 1 June 1998
V
V
V
V
V
I
OH
I
OL
Unit
mA
W
Unit
V
V
Note
C
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
3,4
1
2
3