KMM5364003BSW SAMSUNG [Samsung semiconductor], KMM5364003BSW Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
KMM5364003BSW
Manufacturer Part Number
KMM5364003BSW
Description
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KMM5364003BSW.pdf
(18 pages)
- Current page: 2 of 18
- Download datasheet (355Kb)
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
RAS0/RAS2
A0-A11
CAS0
CAS1
CAS2
CAS3
W
47
47
47
47
Vcc
Vss
RAS
CAS0
CAS1
CAS2
CAS3
RAS
LCAS
UCAS
OE
RAS
LCAS
UCAS
OE
0.1 or 0.22uF Capacitor
for each DRAM
W A0-A11
W A0-A11
W A0-A11
U0
U1
U2
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
KMM5364003BSW/BSWG
To all DRAMs
DQ8
DQ17
DQ26
DQ35
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
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