HCTS574HMSR INTERSIL [Intersil Corporation], HCTS574HMSR Datasheet

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HCTS574HMSR

Manufacturer Part Number
HCTS574HMSR
Description
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS574MS is a Radiation Hardened non-inverting
octal D-type, positive edge triggered flip-flop with three-stateable
outputs. The HCTS574MS utilizes advanced CMOS/SOS
technology. The eight flip-flops enter data into their registers on
the LOW-to-HIGH transition of the clock (CP). Data is also
transferred to the outputs during this transition. The output
enable (OE) controls the three-state outputs and is independent
of the register operation. When the output enable is high, the
outputs are in the high impedance state.
The HCTS574MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS574MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS574DMSR
HCTS574KMSR
HCTS574D/Sample
HCTS574K/Sample
HCTS574HMSR
Day (Typ)
- Bus Driver O11utputs - 15 LSTTL Loads
- VIL = 0.8V Max
- VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
RAD (Si)/s
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
Flip-Flop, Three-State, Positive Edge Triggered
C
2
/mg
-9
o
o
C
C
Errors/Bit-
694
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
HCTS574MS
Pinouts
SCREENING LEVEL
GND
OE
D0
D1
D2
Q3
Q4
D5
D6
Q7
Radiation Hardened Octal D-Type
FLATPACK PACKAGE (FLATPACK)
20 LEAD CERAMIC DUAL-IN-LINE
20 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
OE
D0
D1
D2
D3
D4
D5
D6
D7
MIL-STD-1835 CDFP4-F20
MIL-STD-1835 CDIP2-T20
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
TOP VIEW
TOP VIEW
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
Spec Number
20
19
18
17
16
15
14
13
12
11
File Number
20
19
18
17
16
15
14
13
12
11
PACKAGE
VCC
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
CP
518629
2359.2
VCC
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
CP

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HCTS574HMSR Summary of contents

Page 1

... SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCTS574DMSR HCTS574KMSR HCTS574D/Sample HCTS574K/Sample HCTS574HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCTS574MS Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Pinouts 2 ...

Page 2

Functional Diagram D COMMON CONTROLS High Level Low Level Immaterial High Impedance = Transition from Low to High Level Q0 = The level of ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Clock to Q TPLH, VCC = 4.5V TPHL Enable to Ouptput TPZL VCC = 4.5V TPZH VCC = 4.5V Disable to Output TPLZ, VCC = 4.5V TPHZ NOTES: 1. All voltages referenced ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current IOH VCC ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams TR TF INPUT LEVEL 90 10% 10% TW TPLH VS FIGURE 1. CLOCK TO OUTPUT DELAYS AND CLOCK PULSE WIDTH TTLH VOH 80% 20% OUTPUT VOL FIGURE 3. OUTPUT TRANSITION TIME AC Load Circuit ...

Page 9

Three-State Low Timing Diagrams VIH INPUT VS VIL TPZL VOZ VT OUTPUT VOL THREE-STATE LOW VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VT 1.30 VW 0.90 GND 0 Three-State High Timing Diagrams VIH INPUT VS VIL TPZH ...

Page 10

Die Characteristics DIE DIMENSIONS: 101 x 85 mils METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...

Page 11

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, ...

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