HCTS93DMSR INTERSIL [Intersil Corporation], HCTS93DMSR Datasheet

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HCTS93DMSR

Manufacturer Part Number
HCTS93DMSR
Description
Radiation Hardened 4-Bit Binary Ripple Counter
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
FeaturesIntersil
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS93MS is a Radiation Hardened 4-bit binary
ripple counter consisting of four master-slave flip-flops
internally connected to provide a divide-by-two and a divide-
by-eight section. Each section has a separate clock input.
The HCTS93MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
Ordering Information
HCTS93DMSR
HCTS93KMSR
HCTS93D/Sample
HCTS93K/Sample
HCTS93HMSR
Bit-Day (Typ)
- VIL = 0.8V Max
- VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
-55
-55
RAD (Si)/s
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
480
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
MR1
MR2
VCC
SCREENING LEVEL
CP1
NC
NC
NC
HCTS93MS
FLATPACK PACKAGE (FLATPACK)
14 LEAD CERAMIC DUAL-IN-LINE
14 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
MR1
MR2
VCC
CP1
NC
NC
NC
4-Bit Binary Ripple Counter
MIL-STD-1835 CDFP3-F14
MIL-STD-1835 CDIP2-T14
1
2
3
4
5
6
7
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
Radiation Hardened
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
14
13
12
11
10
9
8
14
13
12
10
11
9
8
Spec Number
CP0
NC
Q0
Q3
GND
Q1
Q2
File Number
PACKAGE
CP0
NC
Q0
Q3
GND
Q1
Q2
518622
3060.1

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HCTS93DMSR Summary of contents

Page 1

... The HCTS93MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. Ordering Information PART NUMBER TEMPERATURE RANGE HCTS93DMSR HCTS93KMSR HCTS93D/Sample HCTS93K/Sample HCTS93HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...

Page 2

Functional Diagram VCC = 5 GND = 10 TRUTH TABLE OUTPUTS COUNT ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL CP0 to Q0 TPHL VCC = 4.5V TPLH VCC = 4.5V CP1 to Q1 TPHL VCC = 4.5V TPLH VCC = 4.5V CP1 to Q2 TPHL VCC = 4.5V TPLH VCC = ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current IOH VCC ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 Pulse Width, Removal Timing Diagram Negative Edge ...

Page 9

Die Characteristics DIE DIMENSIONS mils 2.25mm x 2.24mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

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