S8201 POLYFET [Polyfet RF Devices], S8201 Datasheet
S8201
Manufacturer Part Number
S8201
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Manufacturer
POLYFET [Polyfet RF Devices]
Datasheet
1.S8201.pdf
(2 pages)
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
transistors designed specifically
General Description
SYMBOL
SYMBOL
Total
Device
Dissipation
"Polyfet" process features
Silicon VDMOS and LDMOS
Gps
VSWR
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Bvdss
20
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Watts
TM
Zero Bias Drain Current
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
PARAMETER
Drain Breakdown Voltage
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Junction to
Case Thermal
Resistance
polyfet rf devices
t
10.00 C/W
o
Maximum
Junction
Temperature
RF CHARACTERISTICS (
200 C
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
ABSOLUTE MAXIMUM RATINGS ( T =
o
-65 C to 150 C
Storage
Temperature
POLYFET RF DEVICES
MIN
MIN
o
1
10
65
o
TYP
TYP
45
4.00
10.0
1.40
0.3
0.6
6.0
DC Drain
Current
4.0
20:1
MAX
MAX
1
7
0.2
1.2
WATTS OUTPUT )
A
SILICON GATE ENHANCEMENT MODE
Relative
UNITS
UNITS
Ohm
Mho
Amp
RF POWER
mA
dB
uA
pF
pF
pF
%
V
V
25 C )
HIGH EFFICIENCY, LINEAR
Drain to
Gate
Voltage
o
HIGH GAIN, LOW NOISE
TEST CONDITIONS
Idq =
Idq =
Idq = 0.20
TEST CONDITIONS
70
V
Vds =
Vds = 0V Vgs = 30V
Ids =
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids =
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
Ids =
Package Style
4.0
0.20
0.20
0.02
REVISION 03/28/2001
VDMOS
10.00
28.0
Watts
28.0
28.0
28.0
A, Vds =
A, Vds =
A, Vds =
A, Vgs = Vds
V, Vgs = 0V
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
mA, Vgs = 0V
Drain to
Source
Voltage
70
Single Ended
V
0.50
TRANSISTOR
28.0
28.0
28.0
SO8
A
V, F =
V, F =
V, F =
S8201
Gate to
Source
Voltage
1,000
1,000
1,000
20
V
MHz
MHz
MHz
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S8201 Summary of contents
Page 1
... Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = 0.50 Amp Vgs = 20V, Vds = 10V 28.0 Vgs = 0V MHz pF Vds = 28.0 Vgs = 0V MHz Vds = pF 28.0 Vgs = 0V MHz Vds = pF REVISION 03/28/2001 S8201 TRANSISTOR SO8 Gate to Source Voltage 20 V 28.0 1,000 MHz 28.0 1,000 MHz 28.0 1,000 ...
Page 2
... CURVE S2A 1 DIE IV 1.6 1.4 1.2 1 0.8 0.6 0.4 0 VDS IN VOLTS vg=2v Vg=4v Vg=6v vg=8v Zin Zout 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com S8201 100 13.50 12.50 Pout 10 11.50 10.50 9.50 1 Gain 8.50 7.50 0.1 0 10.00 1.00 0. vg=12v Tolerance .XX +/-0.01 ...