SI8401DB-T1 VISHAY [Vishay Siliconix], SI8401DB-T1 Datasheet - Page 2

• Manufacturer Part Number: SI8401DB-T1
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si8401DB
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
0
b
Parameter
2
V
a
V
a
DS
GS
Output Characteristics
− Drain-to-Source Voltage (V)
a
= 5 thru 2.5 V
4
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
2 V
t
8
SD
t
t
rr
fs
gs
gd
r
f
g
1.5 V
)
10
V
I
V
D
DS
DS
^ −1 A, V
= −10 V, V
V
= −20 V, V
V
I
V
V
V
V
DS
V
F
V
V
DS
GS
DS
DD
DD
Test Condition
GS
I
DS
= − A, di/dt = 100 A/ms
DS
S
v −5 V, V
= V
= −1 A, V
= −4.5 V, I
= −20 V, V
= −10 V, R
= −10 V, R
= −2.5 V, I
= −10 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= −4.5 V, R
= −4.5 V, I
D
= 0 V, T
GS
GS
GS
= −250 mA
D
GS
D
L
L
D
= "12 V
= −4.5 V
= −1 A
= 0 V
= 10 W
= 10 W
= −1 A
= −1 A
= 0 V
J
= 70_C
D
G
10
= −1 A
8
6
4
2
0
= 6 W
0.0
0.5
V
GS
−0.45
Min
Transfer Characteristics
−5
− Gate-to-Source Voltage (V)
25_C
T
C
1.0
= 125_C
0.057
0.080
−0.73
Typ
−0.9
2.1
2.9
17
28
88
60
11
6
S-40384—Rev. F, 01-Mar-04
Document Number: 71674
1.5
−55_C
"100
Max
0.065
0.095
−1.1
135
−1
−5
17
25
45
90
2.0
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
2.5