EM565161BJ-70 Etron Technology Inc., EM565161BJ-70 Datasheet

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EM565161BJ-70

Manufacturer Part Number
EM565161BJ-70
Description
Manufacturer
Etron Technology Inc.

Specifications of EM565161BJ-70

Case
BGA
Date_code
04+
EtronTech
Features
• Single Power Supply Voltage, 3.0 ~ 3.6 V
• Power Down Features Using CE1#, CE2, LB# and
• Low Power Dissipation
• Data retention Supply Voltage: 1.5V to 3.6V
• Direct TTL Compatibility for All Input and Output
• Wide Operating Temperature Range: -40°C to 85°C
• Standby current (maximum) @ VDD = 3.6 V
• Lead Free Package available
Ordering Information
G : indicates Lead Free Package
Overview
The EM565161 is an 8M-bit SRAM organized as 512K words by 16 bits. It is designed with advanced CMOS
technology. This Device operates from a single power supply. Advanced circuit technology provides both high
speed and low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are
asserted high or CE2 is asserted low. There are three control inputs. CE1# and CE2 are used to select the
device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control
pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor
system applications where high speed, low power and battery backup are required. And, with a guaranteed
operating range from –40°C to 85°C, the EM565161 can be used in environments exhibiting extreme
temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
UB#
Part Number
EM565161BJ-70/-70G
EM565161BA-70/-70G
EM565161BJ-55/-55G
EM565161BA-55/-55G
Spee
d
70 ns
70 ns
55 ns
55 ns
FAX: (886)-3-5778671
I
35 µA 6x9 BGA
35 µA 8x10 BGA
35 µA 6x9 BGA
35 µA 8x10 BGA
DDS2
Package
Pin Assignment
48-Ball BGA (CSP), Top View
Pin Names
C
D
G
H
A
B
E
F
Symbol
A0 – A18
DQ0-DQ15
CE1#,CE2
OE#
WE#
LB#,UB#
GND
V
NC
DD
512K x 16 Low Power SRAM
DQ14
DQ15
GND
VDD
DQ8
DQ9
A18
LB#
1
DQ11
DQ10
DQ12
DQ13
OE#
UB#
NC
A8
2
Preliminary, Rev 1.2 Dec/2007
Function
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable
Read/Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
GND
A14
A12
A17
A0
A3
A5
A9
3
A16
A15
A13
A10
A7
A1
A4
A6
4
EM565161
CE1#
WE#
DQ1
DQ3
DQ4
DQ5
A11
A2
5
VDD
GND
CE2
DQ0
DQ2
DQ6
DQ7
NC
6

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