W27E257-15 WINBOND [Winbond], W27E257-15 Datasheet

no-image

W27E257-15

Manufacturer Part Number
W27E257-15
Description
32K X 8 ELECTRICALLY ERASABLE EPROM
Manufacturer
WINBOND [Winbond]
Datasheet
GENERAL DESCRIPTION
The W27E257 is a high-speed, low-power Electrically Erasable and Programmable Read Only
Memory organized as 32768
provides an electrical chip erase function. This part was the same EPROM Writer's utilities as the
W27E256.
FEATURES
PIN CONFIGURATIONS
High speed access time:
100/120/150 nS (max.)
Read operating current: 15 mA (typ.)
Erase/Programming operating current
1 mA (typ.)
Standby current: 5 A (typ.)
Single 5V power supply
Q0
A6
A5
A4
A3
A2
A1
A0
NC
GND
V
A12
Q0
Q1
Q2
A6
A5
A4
A3
A2
A1
A0
PP
A7
5
10
11
12
13
6
7
8
9
32K
1
4
A
7
Q
1
4 3 2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A
1
2
1
5
Q
2
28-pin
V
P
P
1
6
G
N
D
DIP
32-pin
PLCC
N
C
N
C
1
7
1
1
8
V
C
C
3
2
Q
3
8 ELECTRICALLY ERASABLE EPROM
A
1
4
19
18
17
15
1
9
Q
4
28
27
26
25
24
23
22
21
20
16
3
1
A
1
3
Q
5
2
0
3
0 29
23
22
21
28
27
26
25
24
8 bits that operates on a single 5 volt power supply. The W27E257
OE
Q7
A14
A13
A8
A9
A11
A10
CE
Q6
Q5
Q4
Q3
V
CC
NC
A11
OE
A10
A8
A9
CE
Q7
Q6
- 1 -
BLOCK DIAGRAM
PIN DESCRIPTION
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available packages: 28-pin 600 mil DIP and
32-pin PLCC
SYMBOL
A0 A14
Q0 Q7
GND
V
V
OE
CE
NC
GND
CC
V
PP
V PP
A14
CC
CE
OE
A0
.
.
Publication Release Date: January 1997
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Program/Erase Supply Voltage
Power Supply
Ground
No Connection
CONTROL
DECODER
DESCRIPTION
OUTPUT
BUFFER
CORE
ARRAY
W27E257
Revision A3
Q0
Q7
.
.

Related parts for W27E257-15

W27E257-15 Summary of contents

Page 1

... bits that operates on a single 5 volt power supply. The W27E257 +14V erase/+12V programming voltage Fully static operation All inputs and outputs directly TTL/CMOS compatible Three-state outputs Available packages: 28-pin 600 mil DIP and 32-pin PLCC BLOCK DIAGRAM ...

Page 2

... The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs, which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half an hour), the W27E257 uses electrical erasure. Generally, the chip can be erased within 100 mS by using an EPROM writer with a special erase algorithm. ...

Page 3

... OE. Two-line Output Control Since EPROMs are often used in large memory arrays, the W27E257 provides two control inputs for multiple memory connections. Two-line control provides for lowest possible memory power dissipation and ensures that data bus contention will not occur. ...

Page 4

... -0 13. 13. and removed simultaneously or after V PP SYMBOL CONDITIONS OUT OUT - 4 - W27E257 RATING UNIT -55 to +125 C -65 to +125 -0.5 to +14.5 V -0.5 to +14 LIMITS UNIT MIN. TYP. MAX ...

Page 5

... Input and Output Timing Reference Level Output Load AC Test Load and Waveform D OUT Input 2.4V 0.45V 0.45V to 2. 0.8V/2. 100 pF +1.3V (IN914) 3.3K ohm 100 pF (Including Jig and Scope) Output Test Points Test Points 2.0V 2.0V 0.8V 0.8V Publication Release Date: January 1997 - 5 - W27E257 CONDITIONS /I = -0.4 mA/2 Revision A3 ...

Page 6

... and removed simultaneously or after W27E257 LIMITS MIN. TYP. MAX - 1 100 - - 100 -0.3 - 0 0. W27E257-15 MAX. MIN. MAX. - 150 - - 120 - 150 - 120 - 150 - UNIT UNIT ...

Page 7

... SYM. MIN. T 2.0 VPS PWP T 95 PWE T 2 2.0 OES T - OEV T 0 DFP 2.0 AHC and removed simultaneously or after V PP Publication Release Date: January 1997 - 7 - W27E257 LIMITS UNIT MIN. TYP. MAX. - -0.3 - 0.8 V 2 0. 11.5 12.0 12.5 V 11.75 12.0 12.25 V 4.5 5.0 5.5 V ...

Page 8

... Address IL Others = V IL Stable ACC AS ARC T DFP Data All One OUT AHC T VPS OES PWE OE T OEV - 8 - W27E257 Valid Output High Z Blank Check Read Verify Address Address Stable Stable T ACC D D OUT OUT ...

Page 9

... Program Program Verify Address Stable Address Stable T DFP Data In Stable OUT OUT VPS T PWP T OES T OEV - 9 - W27E257 Read Verify Address Valid T ACC D OUT Publication Release Date: January 1997 Revision A3 ...

Page 10

... Address = First Location Vcc = 5V Vpp = 12V Program One 100 S Pulse Increment X Yes X = 25? No Fail Verify One Byte Pass No Last Address? Yes Vcc = 5V Vpp = 5V Compare Fail All Bytes to Original Data Pass Pass Device - 10 - W27E257 Fail Verify One Byte Pass Fail Device ...

Page 11

... Vpp = 14V A9 = 14V Chip Erase 100 mS Pulse Address = First Location Increment X Fail Erase Verify Pass Last Address? Yes Vcc = 5V Vpp = 5V Compare Fail All Bytes to FFs (HEX) Pass Pass Device - 11 - W27E257 20? Yes Fail Device Publication Release Date: January 1997 Revision A3 ...

Page 12

... ORDERING INFORMATION PART NO. ACCESS TIME (nS) W27E257-10 100 W27E257-12 120 W27E257-15 150 W27E257P-10 100 W27E257P-12 120 W27E257P-15 150 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure ...

Page 13

... Seating Plane Base Plane A 1 Seating Plane W27E257 Dimension in Inches Dimension in mm Symbol Min. Nom. Max. Min. Nom. Max. A 5.33 0.210 A 0.010 0. 0.150 0.155 0.160 3.81 3.94 4. 0.016 0.018 0.41 0.46 0.56 0.022 B 0 ...

Page 14

... TEL: 886-2-7190505 FAX: 886-2-7197502 Note: All data and specifications are subject to change without notice. Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2730 Orchard Parkway, San Jose, CA 95134, U.S.A. TEL: 1-408-9436666 FAX: 1-408-9436668 - 14 - W27E257 ...

Related keywords