K7R163684B_06 SAMSUNG [Samsung semiconductor], K7R163684B_06 Datasheet - Page 15

• Manufacturer Part Number: K7R163684B_06
• Description: 512Kx36 & 1Mx18 QDRTM II b4 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7R163684B
K7R161884B
TIMING WAVE FORMS OF READ, WRITE AND NOP
K
K
SA
W
R
D(Data In)
D(Data Out)
C
C
Note: 1. If address A3=A2, data Q3-1=D2-1, data Q3-2=D2-2 , data Q3-3=D2-3, data Q3-4=D2-4
2.BWx (NWx) assumed active.
Write data is forwarded immediately as read results.
A1
READ
A2
WRITE
Q1-1
D2-1
A3
512Kx36 & 1Mx18 QDR
READ
- 15 -
Q1-2
D2-2
Q1-3
D2-3
A4
WRITE
Q1-4
D2-4
Q3-1
D4-1
Rev. 5.0 July 2006
NOP
Don
TM
′
t Care
D4-2
Q3-2
II b4 SRAM
D4-3
Q3-3
Undefined
NOP