K6T4016C3B-B SAMSUNG [Samsung semiconductor], K6T4016C3B-B Datasheet - Page 6

• Manufacturer Part Number: K6T4016C3B-B
• Description: 256Kx16 bit Low Power CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6T4016C3B Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
UB, LB
OE
Data out
t
HZ
levels.
interconnection.
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
BLZ
t
t
t
HZ
(Address Controlled
OH
(WE=V
OLZ
(Max.) is less than
t
AA
t
CO
IH
t
t
BA
)
OE
t
AA
6
t
,
RC
CS=OE=V
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, WE=V
Data Valid
IH
, UB or/and LB=V
Data Valid
t
OH
t
OHZ
t
CMOS SRAM
IL
BHZ
t
)
HZ
Revision 5.0
May 2001