K6F2008S2E-F SAMSUNG [Samsung semiconductor], K6F2008S2E-F Datasheet - Page 4

• Manufacturer Part Number: K6F2008S2E-F
• Description: 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6F2008S2E Family
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Industrial Product: T
2. Overshoot: Vcc+1.0V in case of pulse width 20ns.
3. Undershoot: -1.0V in case of pulse width 20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
1. Typical value are measured at V
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Item
Item
Item
A
=-40 to 85 C, unless otherwise specified.
1)
(f=1MHz, T
CC
=2.5V, T
Symbol
I
I
V
V
I
I
A
CC1
CC2
SB1
I
LO
LI
OH
OL
=25 C)
Symbol
A
=25 C, and not 100% tested.
C
C
IN
IO
V
CS
Cycle time=1 s, 100% duty, I
CS
Cycle time=Min, 100% duty, I
CS
I
I
Other inputs=Vss to Vcc
OL
OH
1) CS
2) 0V CS
IN
=0.5mA
1
2
2
=-0.5mA
=Vss to Vcc
=V
=V
V
1
Symbol
CC
IH
IH
, V
Vcc-0.2V, CS2 Vcc-0.2V(CS
Vcc
Vss
or CS
V
-0.2V, V
V
2
IH
IL
IN
0.2V CS
=V
2
=V
IL
IN
Test Condition
or V
IL
Test Conditions
0.2V or V
or OE=V
2
IH
V
V
controlled)
IN
IO
4
=0V
=0V
1)
-0.2
Min
2.3
2.0
IH
IO
IO
0
IN
=0mA, CS
or WE=V
=0mA, CS
3)
V
CC
-0.2V
1
controlled) or
IL,
1
1
=V
V
0.2V,
IO
IL
=Vss to Vcc
Typ
,
2.5
0
-
-
Min
-
-
85ns
70ns
Min
2.0
-1
-1
-
-
-
-
-
Vcc+0.2
Max
CMOS SRAM
Max
10
2.7
0.6
8
0
Typ
0.5
-
-
-
-
-
-
-
2)
1)
September 2001
Max
Revision 1.0
0.4
12
15
1
1
2
5
-
Unit
pF
pF
Unit
V
V
V
V
Unit
mA
mA
mA
V
V
A
A
A