K6F2008S2E-F SAMSUNG [Samsung semiconductor], K6F2008S2E-F Datasheet - Page 5
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K6F2008S2E-F
Manufacturer Part Number
K6F2008S2E-F
Description
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K6F2008S2E-F.pdf
(9 pages)
K6F2008S2E Family
AC CHARACTERISTICS
1. The parameter is measured with 30pF test load.
DATA RETENTION CHARACTERISTICS
1. 1) CS
2. Typical value are measured at T
AC OPERATING CONDITIONS
TEST CONDITIONS
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.1V
Output load (See right): C
Read
Write
2) 0 CS
1
Vcc-0.2V, CS
2
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
0.2V(CS
Item
2
Parameter List
controlled).
2
Vcc-0.2V(CS
(Test Load and Test Input/Output Reference)
C
L
L
=100pF+1TTL
=30pF+1TTL
A
=25 C and not 100% tested.
1
controlled) or
(Vcc=2.3~2.7V, Industrial product: T
Symbol
t
t
V
I
SDR
RDR
DR
DR
CS
Vcc=1.5V, CS
See data retention waveform
1
Vcc-0.2V
Symbol
Test Condition
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
OHZ
t
t
t
OLZ
WC
CW
AW
WP
WR
DW
OW
RC
CO
OE
OH
DH
AA
LZ
HZ
AS
1
1)
Vcc-0.2V
5
A
Min
1)
=-40 to 85 C)
70
10
10
70
60
60
50
30
5
0
0
0
0
0
0
5
-
-
-
70ns
1. Including scope and jig capacitance
2. R
3. V
1)
Max
1
TM
70
70
35
25
25
20
=3070
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
Speed Bins
1.5
t
=2.3V
RC
C
0
-
L
1)
,
R
2
=3150
Min
Typ
85
10
10
85
70
70
60
35
0.5
5
0
0
0
0
0
0
5
-
-
-
-
-
-
V
2)
TM
85ns
R
R
CMOS SRAM
3)
1
2
2)
3)
Max
Max
2.7
85
85
40
25
25
25
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
September 2001
Revision 1.0
Units
Unit
ns
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A