HSMS282X HP [Agilent(Hewlett-Packard)], HSMS282X Datasheet - Page 3

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HSMS282X

Manufacturer Part Number
HSMS282X
Description
Surface Mount RF Schottky Barrier Diodes
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as “CM”, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent capaci-
tances can then be calculated by
the formulas given below.
Linear Equivalent Circuit Model
Diode Chip
R
C
R
where
I
I
T = temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
b
s
S
j
j
= saturation current (see table of SPICE parameters)
= externally applied bias current in amps
= 8.33 X 10
= junction capacitance (see Table of SPICE parameters)
= series resistance (see Table of SPICE parameters)
R
I
S
b
+ I
s
-5
nT
R
C
j
j
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
C
DIAGONAL
C
C
1
2
= _______ + _______
C
C
1
1
x C
+ C
3
2
2
C
C
3
4
C
C
3
3
+ C
x C
4
4
A
B
SPICE Parameters
Parameter Units HSMS-282x
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
This information does not apply
to cross-over quad diodes.
C
C
I
B
E
P
R
P
M
I
N
ADJACENT
BV
J0
S
G
B
V
S
T
= C
pF
eV
A
A
V
V
1
+ ____________
–– + –– + ––
C
1
2.2E - 8
2
1E - 4
0.69
1.08
0.65
0.7
6.0
0.5
15
2
1
1
C
3
C
1
4

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