HSMS282X HP [Agilent(Hewlett-Packard)], HSMS282X Datasheet - Page 4

• Manufacturer Part Number: HSMS282X
• Description: Surface Mount RF Schottky Barrier Diodes
• Manufacturer: HP [Agilent(Hewlett-Packard)]

Typical Performance, T
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
Figure 4. Dynamic Resistance vs.
Forward Current.
Figure 7. Typical Output Voltage vs.
Input Power, Small Signal Detector
Operating at 850 MHz.
0.001
1000
0.01
0.01
100
100
0.1
0.1
10
10
1
1
1
-40
0.1
0
T
T
T
T
I
DC bias = 3 A
F
V
A
A
A
A
F
P
0.10
– FORWARD CURRENT (mA)
= +125 C
= +75 C
= +25 C
= –25 C
in
– FORWARD VOLTAGE (V)
-30
– INPUT POWER (dBm)
RF in
1
0.20
3.3 nH
18 nH
-20
0.30
100 pF
HSMS-282B Vo
10
-10
0.40
100 K
-25 C
+25 C
+75 C
0.50
100
C
0
= 25 C (unless otherwise noted), Single Diode
100,000
1E-005
10,000
0.0001
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
Figure 8. Typical Output Voltage vs.
Input Power, Large Signal Detector
Operating at 915 MHz.
Figure 5. Typical V
and Quads at Mixer Bias Levels.
0.001
1000
0.01
100
0.3
0.1
30
10
10
10
1
1
1
-20
0.2
0
+25 C
V
V
0.4
F
P
R
-10
in
- FORWARD VOLTAGE (V)
– REVERSE VOLTAGE (V)
– INPUT POWER (dBm)
68
RF in
0.6
5
0
4
f
0.8
Match, Series Pairs
HSMS-282B
I
T
T
T
F
A
A
A
10
(Left Scale)
V
100 pF
= +125 C
= +75 C
= +25 C
F
1.0
10
(Right Scale)
4.7 K
20
1.2
Vo
15
1.4
30
30
10
1
0.3
Figure 3. Total Capacitance vs.
Reverse Voltage.
Figure 9. Typical Conversion Loss vs.
L.O. Drive, 2.0 GHz (Ref AN997).
Figure 6. Typical V
at Detector Bias Levels.
100
0.8
0.6
0.4
0.2
10
10
1
9
8
7
6
0.10
1
0
0
LOCAL OSCILLATOR POWER (dBm)
V
V
0
F
R
- FORWARD VOLTAGE (V)
– REVERSE VOLTAGE (V)
2
2
0.15
4
f
4
Match, Series Pairs
V
6
F
0.20
I
(Right Scale)
F
(Left Scale)
8
6
10
0.25
12
8
1.0
0.1