DMN2400UV-13 DIODES [Diodes Incorporated], DMN2400UV-13 Datasheet - Page 2

• Manufacturer Part Number: DMN2400UV-13
• Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4)
Pulsed Drain Current
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN2400UV
Document number: DS31852 Rev. 6 - 2
4. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
J
= 25°C
@T
@T
Steady
State
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
T
T
A
A
= 25°C
= 85°C
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
|
2 of 6
Min
0.5
20
Symbol
Symbol
T
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
J,
V
V
R
I
P
DSS
GSS
I
DM
T
θ JA
D
D
STG
13.74
10.54
0.35
0.45
0.55
0.65
36.0
0.07
4.06
7.28
Typ
0.3
1.4
0.7
5.7
4.2
0.5
0.1
68
-
-
-
-
-
Max
±1.0
0.48
100
±50
0.9
0.5
0.7
0.9
1.5
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-55 to +150
Value
Value
233.8
1.33
0.84
Unit
±12
530
nC
nC
nC
20
nA
μA
pF
pF
pF
Ω
Ω
ns
ns
ns
ns
3
V
V
S
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
f = 1.0MHz
V
V
I
V
R
I
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
GS
DS
DS
GS
DD
L
=250mA
= 200mA
= 47Ω, R
= 0V, I
= 20V, V
= ±4.5V, V
= ±10V, V
= V
= 5.0V, I
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 1.5V, I
= 10V, I
= 0V, I
=16V, V
= 0V, V
=4.5V, V
= 10V, V
GS
Test Condition
, I
DMN2400UV
D
S
GS
D
G
D
GS
= 150mA,
= 250μA
D
D
D
D
D
GS
DS
GS
= 250μA
= 400mA
= 10Ω,
DS
= 200mA
= 600mA
= 500mA
= 350mA
= 50mA
= 0V,
DS
= 0V,
= 0V
= 10V,
= 4.5V,
© Diodes Incorporated
Units
Units
2
°C/W
= 0V
mW
= 0V
x 6).
°C
V
V
A
A
January 2011