DMN2400UV-13 DIODES [Diodes Incorporated], DMN2400UV-13 Datasheet - Page 4

• Manufacturer Part Number: DMN2400UV-13
• Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

DMN2400UV
Document number: DS31852 Rev. 6 - 2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
60
50
40
30
20
10
5
4
3
2
1
0
0
0
-50
0
0
-25
0.1
Fig. 11 Gate-Charge Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
Q , TOTAL GATE CHARGE (nC)
DS
A
g
5
0
Fig. 9 Typical Capacitance
0.2
25
I = 250mA
V
D
DS
C
0.3
C
C
= 10V
10
I = 250µA
50
D
oss
iss
rss
75
0.4
I = 1mA
D
f = 1MHz
100
15
0.5
125 150
0.6
20
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1,000
1.6
1.2
0.8
0.4
100
0.1
0
10
1
0
2
Fig. 10 Typical Drain-Source Leakage Current
Fig. 8 Diode Forward Voltage vs. Current
4
0.2
V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
SD
DS
6
vs. Drain-Source Voltage
0.4
8
10
0.6
12
T = 25°C
A
T = 150°C
T = 125°C
T = 85°C
A
A
0.8
T = -55°C
A
T = 25°C
A
14
A
DMN2400UV
16
1.0
© Diodes Incorporated
18
January 2011
1.2
20