2MBI450U4N-170-50 FUJI [Fuji Electric], 2MBI450U4N-170-50 Datasheet - Page 3

• Manufacturer Part Number: 2MBI450U4N-170-50
• Description: IGBT MODULE
• Manufacturer: FUJI [Fuji Electric]

2MBI450U4N-170-50
10000
10000
1000
1000
100
350
300
250
200
150
100
100
10
50
10
0
0.1
0.1
0
Vcc=900V, Ic=450A, VGE=±15V, Tj= 125°C
Vcc=900V, VGE=±15V, Rg=1.1Ω, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=900V, Ic=450A, VGE=±15V, Tj= 25°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
ton
toff
tr
tf
200
Gate resistance : RG [Ω]
Gate resistance : RG [Ω]
Collector current : Ic [A]
1.0
1.0
400
10.0
10.0
600
Eon
Eoff
Err
ton
toff
tr
tf
100.0
100.0
800
3 3
10000
1000
1200
1000
100
800
600
400
200
250
200
150
100
10
50
+VGE=15V,-VGE <= 15V, RG >= 1.1Ω ,Tj <= 125°C
0
0
0
0
0
Vcc=900V, VGE=±15V, Rg=1.1Ω, Tj=125°C
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
toff
Reverse bias safe operating area (max.)
Vcc=900V, VGE=±15V, Rg=1.1Ω
Collector-Emitter voltage : VCE [V]
200
Stray inductance <= 100nH
200
500
Collector current : Ic [A]
Collector current : Ic [A]
400
400
1000
600
600
Err(25°C)
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Eoff(25°C)
800
1500
IGBT Modules
ton
tr
tf
1000
800