CM150DU-24NFH_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM150DU-24NFH_11 Datasheet
CM150DU-24NFH_11
Related parts for CM150DU-24NFH_11
CM150DU-24NFH_11 Summary of contents
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... Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM ±0. C2E1 3–M5NUTS 12mm deep 2.5 2 LABEL CM150DU-24NFH HIGH POWER SWITCHING USE ¡I C ................................................................... ¡V CES ......................................................... ¡Insulated Type ¡2-elements in a pack T measured point C 2–φ6.5 MOUNTING HOLES C1 12 13.5 TAB #110. t=0.5 ...
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... E GE IGBT part (1/2 module) FWDi part (1/2 module) *2 Case to heat sink, Thermal compound Applied IGBT part (1/2 module) FWDi part (1/2 module) ) does not exceed MITSUBISHI IGBT MODULES CM150DU-24NFH HIGH POWER SWITCHING USE Ratings 1200 ±20 150 (Note 2) 300 (Note 2) (Note 2) 150 (Note 2) ...
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... 200 250 300 ( 25° MITSUBISHI IGBT MODULES CM150DU-24NFH HIGH POWER SWITCHING USE TRANSFER CHARACTERISTICS ( TYPICAL ) V = 10V 25° 125° GATE-EMITTER VOLTAGE V GE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS ...
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... Per unit base = 0.35K/W th(j–c) –3 10 –3 10 –3 10 1000 4 MITSUBISHI IGBT MODULES CM150DU-24NFH ( TYPICAL ) Conditions 600V CC = ±15V 2.1Ω 25°C j Inductive load ...