UPA809T-T1 NEC [NEC], UPA809T-T1 Datasheet - Page 3

• Manufacturer Part Number: UPA809T-T1
• Description: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
• Manufacturer: NEC [NEC]

TYPICAL CHARACTERISTICS (T
200
100
30
20
10
10
0
0
5
0
f = 2 GHz
V
CE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
= 1 V
1
1
Collector to Emitter Voltage V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Ambient Temperature T
Collector Current I
2
50
2
3
3
4
C
100
(mA)
A
5
5
(°C)
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
A
Free Air
B
CE
= 20 A
= 25 C)
(V)
6
7
150
10
0.05
0.02
0.01
100
200
100
0.5
0.2
0.1
50
20
10
10
5
2
1
0
5
0
0.1
0
V
CE
f = 2 GHz
V
V
0.2
1
CE
CE
= 1 V
= 1 V
= 1 V
Base to Emitter Voltage V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.5
Collector Current I
INSERTION GAIN vs.
COLLECTOR CURRENT
Collector Current I
DC CURENT GAIN vs.
COLLECTOR CURRENT
1
2
2
0.5
3
5
C
C
10
(mA)
(mA)
BE
PA809T
5
20
(V)
7
50
100
10
1
3