K4F151611 Samsung, K4F151611 Datasheet
K4F151611
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K4F151611 Summary of contents
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... Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES • Part Identification - K4F171611D-J(T) (5V, 4K Ref.) - K4F151611D-J(T) (5V, 1K Ref.) - K4F171612D-J(T) (3.3V, 4K Ref.) - K4F151612D-J(T) (3.3V, 1K Ref.) • Active Power Dissipation 3.3V ...
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... N RAS 14 *A11(N.C) 15 *A10(N. *A10 and A11 are N.C for K4F151611(2)D(5V/3.3V, 1K Ref. product 400mil 42 SOJ T : 400mil 50(44) TSOP II PIN CONFIGURATION (Top Views) • K4F17(5)1611(2)D DQ0 41 DQ15 DQ1 40 DQ14 DQ2 39 DQ13 DQ3 38 DQ12 V CC ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D DC AND OPERATING CHARACTERISTICS Symbol Power Speed -50 I Don t care CC1 -60 Normal I Don t care CC2 L -50 I Don t care CC3 -60 -50 I Don t care CC4 -60 Normal I Don t care CC5 L -50 I Don t care CC6 - Don t care CC7 I L Don t care ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V CC Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (1K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. Input voltage levels are Vih/Vil Transition times are measured between V Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF. ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D 13 referenced to the later CAS falling edge at word read-modify-write cycle. CWD t 14. is specified from W falling edge to the earlier CAS rising edge CWL 15 referenced to the earlier CAS falling edge before RAS transition low. CSR 16 referenced to the later CAS rising edge after RAS transition low. ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD t CAS t CSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D LOWER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD RSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS CRP t RCD UCAS CRP t RCD LCAS RAD t RAH t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP t RCD LCAS RAD t RAH t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP LCAS RAD t RAH t ASR t ASC ROW A ADDR RCS DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : Don t care ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS RPC UCAS LCAS DQ0 ~ DQ7 OFF DQ8 ~ DQ15 RASS t CSR t CSR CMOS DRAM ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D PACKAGE DIMENSION 42 SOJ 400mil #42 #1 0.0375 (0.95) 0.050 (1.27) 50(44) TSOP(II) 400mil 0.841 (21.35) 0.821 (20.85) 0.829 (21.05) 0.034 (0.875) 1.091 (27.71) MAX 1.070 (27.19) 1.080 (27.43) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) MAX 0.047 (1.20) MAX 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) ...