K4F151611 Samsung, K4F151611 Datasheet - Page 5

• Manufacturer Part Number: K4F151611
• Description: 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
• Manufacturer: Samsung

K4F171611D, K4F151611D
K4F171612D, K4F151612D
CAPACITANCE
AC CHARACTERISTICS
Test condition (5V device) : V
Test condition (3.3V device) : V
Input capacitance [A0 ~ A11]
Input capacitance [RAS, UCAS, LCAS, W, OE]
Output capacitance [DQ0 - DQ15]
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Parameter
(T
Parameter
A
=25 C, V
CC
CC
=5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
=3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
(0 C T
CC
=5V or 3.3V, f=1MHz)
A
70 C, See note 1,2)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RWC
RAC
CAC
AA
CLZ
OFF
T
RP
RAS
RSH
CSH
CAS
RCD
RAD
CRP
ASR
RAH
ASC
CAH
RAL
RCS
RCH
RRH
WCH
WP
RWL
CWL
Symbol
C
C
C
IN1
IN2
DQ
Min
133
90
30
50
13
50
13
20
15
10
10
25
10
10
13
13
0
0
3
5
0
0
0
0
0
-50
Max
10K
10K
50
15
25
13
50
37
25
Min
-
-
-
Min
110
155
40
60
15
60
15
20
15
10
10
30
10
10
15
15
0
0
3
5
0
0
0
0
0
-60
Max
10K
10K
Max
60
15
30
15
50
45
30
5
7
7
CMOS DRAM
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
pF
pF
pF
Notes
3,4,10
3,4,5
3,10
10
11
11
3
6
2
4
8
8