F2002 Polyfet RF Devices, F2002 Datasheet - Page 2

• Manufacturer Part Number: F2002
• Description: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
• Manufacturer: Polyfet RF Devices

1110 Avenida Acaso, Camarillo, CA 93012 TEL:[phone] FAX:[phone] EMAIL:[e-mail] URL:www.polyfet.com
9
8
7
6
5
4
3
2
1
0
2.5
1.5
0.5
3
2
1
0
0
0
S11 AND S22 SMITH CHART
VGS = 2V
F2002 POUT VS PIN FREQ=1000 MHZ; IDQ=0.4A; VDS=28V
2
GAIN
POUT
0.5
4
VGS = 4V
POUT VS PIN GRAPH
6
1
IV CURVE
F2A 2 DIE IV CURVE
VGS = 6V
Efficiency = 40%
PIN IN WATTS
8
POUT
VDS IN VOLTS
10
1.5
GAIN
VGS = 8V
12
14
VGS = 10V
2
16
18
POLYFET RF DEVICES
VGS 12V
2.5
13
12
11
10
9
8
7
6
5
20
F2002
100
0.01
10
0.1
10
1
1
0
0
PACKAGE DIMENSIONS IN INCHES
2
CAPACITANCE VS VOLTAGE
5
Coss
Crss
4
10
ID AND GM VS VGS
6
F2A 2 DIE GM & ID vs VGS
F2A 2 DIE CAPACITANCE
Ciss
VDS IN VOLTS
Vgs in Volts
8
Gm
15
Id
10
REVISION 8/1/97
20
12
14
25
16
30
18