MX29LV640BXBC-90 MCNIX [Macronix International], MX29LV640BXBC-90 Datasheet

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MX29LV640BXBC-90

Manufacturer Part Number
MX29LV640BXBC-90
Description
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Manufacturer
MCNIX [Macronix International]
Datasheet
FEATURES
GENERAL FEATURES
• Single Power Supply Operation
• 8,388,608 x 8 / 4,194,304 x 16 switchable
• Sector structure
• Sector Protection/Chip Unprotect
• Secured Silicon Sector
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
PERFORMANCE
• High Performance
• Low Power Consumption
• Minimum 100,000 erase/program cycle
• 20-year data retention
GENERAL DESCRIPTION
The MX29LV640T/B is a 64-mega bit Flash memory or-
ganized as 8M bytes of 8 bits or 4M bytes of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV640T/B is packaged in 48-pin TSOP, 63-
ball CSP and 64-ball Easy BGA. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
P/N:PM0920
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
- 8KB (4KW) x 8 and 64KB(32KW) x 127
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
- Provides a 128-word area for code or data that can
be permanently protected.
- Once this sector is protected, it is prohibited to pro-
gram or erase within the sector again.
- Pin-out and software compatible to single power sup-
ply Flash
- Fast access time: 90/120ns
- Fast program time: 11us/word, 45s/chip (typical)
- Fast erase time: 0.9s/sector, 45s/chip (typical)
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 0.2uA (typ.)
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY
1
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
• Erase Suspend/ Erase Resume
• Status Reply
HARDWARE FEATURES
• Ready/Busy (RY/BY) Output
• Hardware Reset (RESET) Input
• WP Pin
PACKAGE
• 48-pin TSOP
• 63-ball CSP
• 64-ball Easy BGA
The standard MX29LV640T/B offers access time as fast
as 90ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV640T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
- Flash device parameters stored on the device and
provide the host system to access.
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
- Data polling & Toggle bits provide detection of pro-
gram and erase operation completion
- Provides a hardware method of detecting program
and erase operation completion
- Provides a hardware method to reset the internal
state machine to read mode
- Write protect (WP) function allows protection of two
outermost boot sectors, regardless of sector protect
status
MX29LV640T/B
FLASH MEMORY
REV. 1.2, NOV. 05, 2003

Related parts for MX29LV640BXBC-90

MX29LV640BXBC-90 Summary of contents

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FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program opera- tions • 8,388,608 4,194,304 x 16 switchable • Sector structure - 8KB (4KW and 64KB(32KW) x ...

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MX29LV640T/B uses a command register to manage this functionality. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combination of ...

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PIN CONFIGURATION 48 TSOP A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 9 A20 RESET 12 A21 RY/BY 15 A18 16 A17 ...

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Ball Easy BGA (Top View, Ball Down A13 A12 RESET A4 B4 RY/ A17 ...

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BLOCK DIAGRAM CE OE CONTROL WE INPUT WP LOGIC BYTE RESET ADDRESS LATCH A0-A21 AND BUFFER Q0-Q15 P/N:PM0920 MX29LV640T/B PROGRAM/ERASE HIGH VOLTAGE MX29LV640T/B FLASH ARRAY ARRAY SOURCE HV Y-PASS GATE PGM SENSE DATA AMPLIFIER HV PROGRAM DATA LATCH I/O BUFFER ...

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MX29LV640T SECTOR GROUP ARCHITECTURE Sector Sector Sector Address Group A21-A12 1 SA0 0000000xxx 1 SA1 0000001xxx 1 SA2 0000010xxx 1 SA3 0000011xxx 2 SA4 0000100xxx 2 SA5 0000101xxx 2 SA6 0000110xxx 2 SA7 0000111xxx 3 SA8 0001000xxx 3 SA9 0001001xxx ...

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Sector Sector Sector Address Group A21-A12 11 SA40 0101000xxx 11 SA41 0101001xxx 11 SA42 0101010xxx 11 SA43 0101011xxx 12 SA44 0101100xxx 12 SA45 0101101xxx 12 SA46 0101110xxx 12 SA47 0101111xxx 13 SA48 0110000xxx 13 SA49 0110001xxx 13 SA50 0110010xxx 13 ...

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Sector Sector Sector Address Group A21-A12 21 SA80 1010000xxx 21 SA81 1010001xxx 21 SA82 1010010xxx 21 SA83 1010011xxx 22 SA84 1010100xxx 22 SA85 1010101xxx 22 SA86 1010110xxx 22 SA87 1010111xxx 23 SA88 1011000xxx 23 SA89 1011001xxx 23 SA90 1011010xxx 23 ...

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Sector Sector Sector Address Group A21-A12 31 SA120 1111000xxx 31 SA121 1111001xxx 31 SA122 1111010xxx 31 SA123 1111011xxx 32 SA124 1111100xxx 32 SA125 1111101xxx 32 SA126 1111110xxx 33 SA127 1111111000 34 SA128 1111111001 35 SA129 1111111010 36 SA130 1111111011 37 ...

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MX29LV640B SECTOR GROUP ARCHITECTURE Sector Sector Sector Address Group A21-A12 1 SA0 0000000000 2 SA1 0000000001 3 SA2 0000000010 4 SA3 0000000011 5 SA4 0000000100 6 SA5 0000000101 7 SA6 0000000110 8 SA7 0000000111 9 SA8 0000001xxx 9 SA9 0000010xxx ...

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Sector Sector Sector Address Group A21-A12 17 SA39 0100000xxx 17 SA40 0100001xxx 17 SA41 0100010xxx 17 SA42 0100011xxx 18 SA43 0100100xxx 18 SA44 0100101xxx 18 SA45 0100110xxx 18 SA46 0100111xxx 19 SA47 0101000xxx 19 SA48 0101001xxx 19 SA49 0101010xxx 19 ...

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Sector Sector Sector Address Group A21-A12 27 SA79 1001000xxx 27 SA80 1001001xxx 27 SA81 1001010xxx 27 SA82 1001011xxx 28 SA83 1001100xxx 28 SA84 1001101xxx 28 SA85 1001110xxx 28 SA86 1001111xxx 29 SA87 1010000xxx 29 SA88 1010001xxx 29 SA89 1010010xxx 29 ...

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Sector Sector Sector Address Group A21-A12 37 SA119 1110000xxx 37 SA120 1110001xxx 37 SA121 1110010xxx 37 SA122 1110011xxx 38 SA123 1110100xxx 38 SA124 1110101xxx 38 SA125 1110110xxx 38 SA126 1110111xxx 39 SA127 1111000xxx 39 SA128 1111001xxx 39 SA129 1111010xxx 39 ...

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Table 1 BUS OPERATION (1) Operation CE Read L Write (Program/Erase) L Standby VCC±0.3V Output Disable L Reset X Sector Group Protect L (Note 2) Chip unprotect L (Note 2) Temporary Sector Group X Unprotect Legend: L=Logic LOW=V , H=Logic ...

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AUTOSELECT CODES (High Voltage Method) Operation CE OE Manufactures Code Read Device Code Silicon (Top Boot Block) ID Device Code (Bottom Boot Block) Sector Protect Verify Secured Silicon Sector Indicator Bit (Q7) Notes: 1.code=xx00h means unprotected, or code=xx01h means protected, ...

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REQUIREMENTS FOR READING ARRAY DATA To read array data from the outputs, the system must drive the CE and OE pins to VIL the power control and selects the device the output control and gates array ...

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OUTPUT DISABLE With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins high impedance state. RESET OPERATION The RESET pin provides a hardware method ...

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It is also possible to determine if the chip is unprotect in the system by writing the Read Silicon ID command. Performing a read operation with A1=VIH, it will produce 00H at data outputs (Q0-Q7) for an unprotect sector. It ...

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SECURED SILICON SECTOR The MX29LV640T/B features a OTP memory region where the system may access through a command se- quence to create a permanent part identification as so called Electronic Serial Number (ESN) in the device. Once this region is ...

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FACTORY LOCKED:Secured Silicon Sector Programmed and Protected At the Factory In device with an ESN, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way. A ...

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SOFTWARE COMMAND DEFINITIONS Device operations are selected by writing specific ad- dress and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. ...

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Legend: X=Don't care RA=Address of the memory location to be read. RD=Data read from location RA during read operation. PA=Address of the memory location to be programmed. Addresses are latched on the falling edge of the pulse, ...

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READING ARRAY DATA The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Automatic Program or Automatic Erase algorithm. ...

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A bit cannot be programmed from a "0" back to a "1". Attempting may halt the operation and set Q5 to "1" ,” or cause the Data Polling algorithm to indicate the operation was successful. ...

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SECTOR ERASE COMMANDS The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Set-up Sector Erase command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will ...

Page 26

Table 4-1. CFI mode: Identification Data Values (All values in these tables are in hexadecimal) Description Query-unique ASCII string "QRY" Primary vendor command set and control interface ID code Address for primary algorithm extended query table Alternate vendor command set ...

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Number of erase block regions Erase block region 1 information [2E,2D blocks in region -1 [30, 2F] = size in multiples of 256-bytes Erase Block Region 2 Information (refer to CFI publication 100) Erase Block Region 3 ...

Page 28

WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/BY. Table 10 and the following subsections describe the func- tions of these bits. Q7, RY/BY, and Q6 ...

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Q7: Data Polling The Data Polling bit, Q7, indicates to the host system whether an Automatic Algorithm is in progress or com- pleted, or whether the device is in Erase Suspend. Data Polling is valid after the rising edge of ...

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But Q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. Q6, by com- parison, indicates whether the device is actively eras- ing Erase Suspend, but cannot distinguish which sectors are selected for erasure. ...

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high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65 Ambient Temperature with Power Applied .... ...

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DC CHARACTERISTICS TA=-40° ° ° ° ° 85° ° ° ° ° C, VCC=2.7V~3.6V Para- meter Description I LI Input Load Current (Note 1) I LIT A9 Input Leakage Current I LO Output Leakage Current ICC1 VCC Active ...

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SWITCHING TEST CIRCUITS DEVICE UNDER TEST CL 6.2K ohm KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS Don't Care, Any Change Permitted Does Not Apply SWITCHING TEST WAVEFORMS 3.0V 0.0V INPUT P/N:PM0920 MX29LV640T/B TEST SPECIFICATIONS Test Condition Output Load 2.7K ohm Output ...

Page 35

AC CHARACTERISTICS Read-Only Operations TA=-40° ° ° ° ° 85° ° ° ° ° C, VCC=2.7V~3.6V Parameter Std. Description tRC Read Cycle Time (Note 1) tACC Address to Output Delay tCE Chip Enable to Output Delay tOE Output ...

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Fig 1. COMMAND WRITE OPERATION VCC 5V VIH Addresses VIL tAS VIH WE VIL tOES CE VIH VIL tCS OE VIH VIL VIH Data VIL READ/RESET OPERATION Fig 2. READ TIMING WAVEFORMS VIH Addresses VIL VIH CE VIL VIH WE ...

Page 37

AC CHARACTERISTICS Parameter Description tREADY1 RESET PIN Low (During Automatic Algorithms) to Read or Write (See Note) tREADY2 RESET PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) tRP RESET Pulse Width (NOT During Automatic Algorithms) tRH ...

Page 38

ERASE/PROGRAM OPERATION Fig 4. AUTOMATIC CHIP/SECTOR ERASE TIMING WAVEFORM Erase Command Sequence(last two cycle) tWC 2AAh Address CE OE tWP WE tCS tDS tDH Data RY/BY tVCS VCC NOTES: 1.SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write ...

Page 39

Fig 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART P/N:PM0920 MX29LV640T/B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address 555H ...

Page 40

Fig 6. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART P/N:PM0920 MX29LV640T/B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector Address ...

Page 41

Fig 7. ERASE SUSPEND/RESUME FLOWCHART P/N:PM0920 MX29LV640T/B START Write Data B0H ERASE SUSPEND NO Toggle Bit checking Q6 not toggled YES Read Array or Program Reading or NO Programming End YES Write Data 30H ERASE RESUME Continue Erase Another NO ...

Page 42

Fig 8. SECURED SILICON SECTOR PROTECTED ALGORITHMS FLOWCHART Device Failed P/N:PM0920 MX29LV640T/B START Enter Secured Silicon Sector Wait 1us First Wait Cycle Data=60h Second Wait Cycle Data=60h A6=0, A1=1, A0=0 Wait 300us No Data = 01h ? Yes Write Reset ...

Page 43

AC CHARACTERISTICS Erase and Program Operations Parameter Std. Description tWC Write Cycle Time (Note 1) tAS Address Setup Time tASO Address Setup Time to OE low during toggle bit polling tAH Address Hold Time tAHT Address Hold Time From CE ...

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Fig 9. AUTOMATIC PROGRAM TIMING WAVEFORMS Program Command Sequence(last two cycle) tWC XXXh Address CE OE tWP WE tCS tDS tDH Data RY/BY tVCS VCC NOTES: 1.PA=Program Address, PD=Program Data, DOUT is the true data the program address P/N:PM0920 MX29LV640T/B ...

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AC CHARACTERISTICS Alternate CE Controlled Erase and Program Operations Parameter Std. Description tWC Write Cycle Time (Note 1) tAS Address Setup Time tAH Address Hold Time tDS Data Setup Time tDH Data Hold Time tGHEL Read Recovery Time Before Write ...

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Fig 10. CE CONTROLLED PROGRAM TIMING WAVEFORM 555 for program 2AA for erase Address tWC tWH WE tGHEL OE tCP CE tWS tDS Data tRH RESET RY/BY NOTES: 1.PA=Program Address, PD=Program Data, DOUT=Data Out, Q7=complement of data written to device. ...

Page 47

Fig 11. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART Increment Address P/N:PM0920 MX29LV640T/B START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Data Poll from system No Verify Word Ok ? YES No ...

Page 48

SECTOR GROUP PROTECT/CHIP UNPROTECT Fig 12. Sector Group Protect / Chip Unprotect Waveform (RESET Control) VID VIH RESET SA, A6 A1, A0 Sector Group Protect or Chip Unprotect Data 60h 1us Note: For sector group protect A6=0, ...

Page 49

Fig 13. IN-SYSTEM SECTOR GROUP PROTECT/CHIP UNPROTECT ALGORITHMS WITH RESET=VID START PLSCNT=1 RESET=VID Wait 1us No First Write Temporary Sector Unprotect Mode Cycle=60h? Yes Set up sector address Sector Protect: Write 60h to sector address with A6=0, A1=1, A0=0 Wait ...

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AC CHARACTERISTICS Parameter Description tVLHT Voltage transition time tWPP1 Write pulse width for sector group protect tOESP OE setup time to WE active Fig 14. SECTOR GROUP PROTECT TIMING WAVEFORM (A9, OE Control 12V 3V A9 tVLHT 12V ...

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Fig 15. SECTOR GROUP PROTECTION ALGORITHM (A9, OE Control) No PLSCNT=32? Yes Device Failed P/N:PM0920 MX29LV640T/B START Set Up Sector Addr PLSCNT=1 OE=VID,A9=VID,CE=VIL A6=VIL Activate WE Pulse Time Out 150us Set WE=VIH, CE=OE=VIL A9 should remain VID Read from Sector ...

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Fig 16. CHIP UNPROTECT TIMING WAVEFORM (A9, OE Control) A1 12V 3V A9 tVLHT A6 12V 3V OE tVLHT WE CE Data P/N:PM0920 MX29LV640T/B tVLHT tWPP 2 tOESP 52 Verify 00H F0H tOE REV. 1.2, NOV. 05, 2003 ...

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Fig 17. CHIP UNPROTECT FLOWCHART (A9, OE Control) Increment Sector Addr * It is recommended before unprotect whole chip, all sectors should be protected in advance. P/N:PM0920 MX29LV640T/B START Protect All Sectors PLSCNT=1 Set OE=A9=VID CE=VIL,A6=1 Activate WE Pulse Time ...

Page 54

AC CHARACTERISTICS Parameter Description tVIDR VID Rise and Fall Time (see Note) tRSP RESET Setup Time for Temporary Sector Unprotect tRRB RESET Hold Time from RY/BY High for Temporary Sector Group Unprotect Fig 18. TEMPORARY SECTOR GROUP UNPROTECT WAVEFORMS 12V ...

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Fig 19. TEMPORARY SECTOR GROUP UNPROTECT FLOWCHART Temporary Sector Unprotect Completed(Note 2) Note : 1. All protected sectors are temporary unprotected. P/N:PM0920 MX29LV640T/B Start RESET = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET = VIH VID=11.5V~12.5V ...

Page 56

Fig 20. SILICON ID READ TIMING WAVEFORM VCC 3V VID ADD VIH A9 VIL VIH ADD A0 VIL tACC A1 VIH VIL VIH ADD VIL CE VIH VIL tCE VIH WE VIL VIH OE VIL VIH DATA VIL Q0-Q15 P/N:PM0920 ...

Page 57

WRITE OPERATION STATUS Fig 21. DATA POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS) tRC Address VA tACC tCE CE tCH tOE OE tOEH WE Q7 Q0-Q6 tBUSY RY/BY NOTES: VA=Valid address. Figure shows are first status cycle after command sequence, last ...

Page 58

Fig 22. DATA POLLING ALGORITHM No Notes: 1.VA=valid address for programming. 2.Q7 should be rechecked even Q5="1" because Q7 may change simultaneously with Q5. P/N:PM0920 MX29LV640T/B Start Read Q7~Q0 Add.=VA(1) Yes Q7 = Data ? ...

Page 59

Fig 23. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS) tRC Address VA tACC tCE CE tCH tOE OE tOEH WE tDH Q6/Q2 Valid Status RY/BY NOTES: VA=Valid address; not required for Q6. Figure shows first two status cycle after command ...

Page 60

Fig 24. TOGGLE BIT ALGORITHM NO Note: 1. Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 changes to "1". P/N:PM0920 MX29LV640T/B START Read Q7~Q0 Read ...

Page 61

Fig 25. Q6 versus Q2 Enter Embedded Erase Erasing Suspend Erase NOTES: The system can use toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended P/N:PM0920 MX29LV640T/B Enter Erase ...

Page 62

ERASE AND PROGRAMMING PERFORMANCE (1) PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycles Note: 1. Not 100% Tested, Excludes external system level over head. 2. Typical program and erase times ...

Page 63

... ORDERING INFORMATION PLASTIC PACKAGE PART NO. ACCESS TIME (ns) MX29LV640TTC-90 90 MX29LV640TTC-12 120 MX29LV640BTC-90 90 MX29LV640BTC-12 120 MX29LV640TTI-90 90 MX29LV640TTI-12 120 MX29LV640BTI-90 90 MX29LV640BTI-12 120 MX29LV640TXBC-90 90 MX29LV640TXBC-12 120 MX29LV640BXBC-90 90 MX29LV640BXBC-12 120 MX29LV640TXBI-90 90 MX29LV640TXBI-12 120 MX29LV640BXBI-90 90 MX29LV640BXBI-12 120 MX29LV640TXEC-90 90 MX29LV640TXEC-12 120 MX29LV640BXEC-90 90 MX29LV640BXEC-12 120 MX29LV640TXEI-90 90 MX29LV640TXEI-12 120 MX29LV640BXEI-90 ...

Page 64

PART NO. ACCESS TIME (ns) MX29LV640TTC-90G 90 MX29LV640TTC-12G 120 MX29LV640BTC-90G 90 MX29LV640BTC-12G 120 MX29LV640TTI-90G 90 MX29LV640TTI-12G 120 MX29LV640BTI-90G 90 MX29LV640BTI-12G 120 P/N:PM0920 MX29LV640T/B Ball Pitch/ PACKAGE Ball size 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin ...

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PACKAGE INFORMATION P/N:PM0920 MX29LV640T/B 65 REV. 1.2, NOV. 05, 2003 ...

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P/N:PM0920 MX29LV640T/B 66 REV. 1.2, NOV. 05, 2003 ...

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P/N:PM0920 MX29LV640T/B 67 REV. 1.2, NOV. 05, 2003 ...

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P/N:PM0920 MX29LV640T/B 68 REV. 1.2, NOV. 05, 2003 ...

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REVISION HISTORY Revision No. Description 1 modified the max. ICC current from 5uA to 15uA 2. To added 63CSP with 0.4mm ball size package information 1 corrected CFI code in table 4-3 device geometry data values ...

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